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2N492C

Onsemi

2N492C by Onsemi

The Onsemi 2N492C is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used for switching applications due to its silicon element material and single configuration.

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,299 parts In-Stock

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Digiode

USA . 520 parts In-Stock

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Native Components

USA . 149 parts In-Stock

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$1.906

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149

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Northwest PG Solutions

USA . 2,066 parts In-Stock

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Kulean Microsystems

USA . 6,718 parts In-Stock

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Problanco Electronics

Mexico . 5,149 parts In-Stock

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TANS Electronics

Latvia . 3,159 parts In-Stock

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Corphita

USA . 2,292 parts In-Stock

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SupplyDigital Components

Austria . 732 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi 2N492C Unijunction Transistor. Manufactured by a trusted industry leader, this high-quality product offers superior performance in switching applications. With a robust design and reliable construction, the 2N492C delivers unmatched value and efficiency to customers. Whether you're looking to enhance your electronic projects or streamline your operations, this transistor is the ideal solution for all your needs. Trust Onsemi and experience the difference with the 2N492C.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and efficient heat dissipation, making this UJT suitable for high temperature and high power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the UJT easy to use and reliable in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in controlling current flow in electronic circuits.

Maximum Emitter Current: 70 mA

High maximum emitter current capability allows for handling larger current loads, making this UJT suitable for a wide range of applications.

Package Shape: ROUND

Round package shape provides uniform stress distribution and compact design, making it easier to mount and use in various electronic devices.

Terminal Form: WIRE

Wire terminal form allows for easy connection and integration into circuits, providing flexibility in installation and use.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage rating ensures reliable operation and protection against voltage spikes, making this UJT suitable for high voltage applications.

No. of Terminals: 3

Three terminals provide necessary connections for proper operation and control in electronic circuits, ensuring ease of use and functionality.

Maximum Power Dissipation (Abs): 0.45 W

With a high maximum power dissipation rating, this UJT can efficiently handle power dissipation, ensuring long-term reliability in demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers better mechanical strength and easy mounting options, making it suitable for various electronic devices and applications.

Maximum Operating Temperature: 140 °C

High maximum operating temperature range allows for reliable performance in extreme temperature conditions, ensuring stability and durability of the UJT.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and reliability, making this UJT suitable for various switching applications in electronic circuits.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range ensures reliable operation in cold environments, making this UJT suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and conductivity, making it easy to integrate this UJT into electronic circuits with reliable connection.

Minimum Intrinsic Stand-off Ratio: 0.56

Higher minimum intrinsic stand-off ratio ensures better switching characteristics, making this UJT suitable for precise control of current in electronic circuits.

Maximum Static Inter-Base Resistance: 9.1 kohm

Higher maximum static inter-base resistance allows for better stability and control in electronic circuits, ensuring reliable performance of the UJT.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in electronic circuits, ensuring convenient installation and use of the UJT.

Maximum Intrinsic Stand-off Ratio: 0.68

Higher maximum intrinsic stand-off ratio provides better control and stability in switching applications, ensuring precise current control in electronic circuits.

Minimum Static Inter-Base Resistance: 6.2 kohm

Lower minimum static inter-base resistance allows for efficient current control and switching performance, making this UJT suitable for various applications.

Minimum Valley Point Current: 8 mA

Higher minimum valley point current ensures reliable triggering and switching characteristics, making this UJT suitable for precise control in electronic circuits.

Maximum Peak Point Current: 2 mA

Low maximum peak point current ensures safe operation and protection against current spikes, making this UJT reliable and stable in various applications.

Technical Specifications

Unijunction Transistors (UFT) 2N492C attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N492C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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