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2N4948

Texas Instruments

2N4948 by Texas Instruments

2N4948 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.36W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.

Median Price

$14.400

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Freelance Electronics

USA . 14 parts In-Stock

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$11.405

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$11.976

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Bristol Electronics

USA . 70 parts In-Stock

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$14.400

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$12.096

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American Microsemiconductor Inc.

USA . 474 parts In-Stock

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Vyrian

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Digiode

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PUI

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Manotoh

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Nova Conductors

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Resion

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ECAB

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Atlantic Semiconductor

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Electronic Expediters

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Electro Mavin

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Fibra_Brandt Electronic GMBH

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Elcom Components

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Mil-Aero Solutions, Inc.

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R&J Components

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Parana Technologies

USA . 1,047 parts In-Stock

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$0.514

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$1.632

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1,047

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DigiPath Technology Company

USA . 488 parts In-Stock

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$0.566

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$0.521

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488

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ChromeModa Solutions

Germany . 3,595 parts In-Stock

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$0.578

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$0.474

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$0.578

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IDEA Electronic Components Group

UK . 1,549 parts In-Stock

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$0.578

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$0.520

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One Stop Electronics

USA . 810 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 245 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

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Glotronic Ltd.

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Corphita

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Aranea Global

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TANS Electronics

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Kulean Microsystems

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UHIMA Technologies

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RTC Component Inc.

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Overview

Enhance your electronic projects with the Texas Instruments 2N4948 Unijunction Transistor. Manufactured by a trusted industry leader, this high-quality transistor is perfect for switching applications, providing reliable performance and efficiency. With a maximum emitter current of 50 mA and a maximum operating temperature of 200°C, the 2N4948 offers exceptional value and versatility. Whether you're a hobbyist or a professional, this transistor will take your projects to the next level. Trust in Texas Instruments for all your electronics needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity, helping the transistor to dissipate heat efficiently during operation.

Maximum Emitter Current: 50 mA

High maximum emitter current allows for the transistor to handle larger loads, making it suitable for switching applications.

Maximum Inter-base Voltage: 25 V

With a high maximum inter-base voltage, this transistor can withstand higher voltage levels in the circuit without breakdown.

Maximum Power Dissipation (Abs): 0.36 W

Low power dissipation ensures that the transistor operates efficiently and does not overheat under normal operating conditions.

Maximum Operating Temperature: 200 °C

Wide temperature range allows for the transistor to be used in various environmental conditions without performance degradation.

Minimum Static Inter-Base Resistance: 4 kohm

Low static inter-base resistance helps in reducing power losses and improving overall efficiency of the transistor in switching applications.

Technical Specifications

Unijunction Transistors (UFT) 2N4948 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

25 V

Maximum Intrinsic Stand-off Ratio:

.82

Minimum Intrinsic Stand-off Ratio:

.55

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

12 kohm

Minimum Static Inter-Base Resistance:

4 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4948 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-422-5280, 5961004225280, 5961-00-490-0318, 5961004900318, 5961-15-167-4561, 5961151674561

NIIN

004225280, 004900318, 151674561

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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