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2N1671B

Onsemi

2N1671B by Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Operating Temperature: 140 Cel; Terminal Position: BOTTOM;

Median Price

$55.990

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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DigiKey Marketplace

USA . 100 parts In-Stock

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$55.990

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Vyrian

USA . 9,666 parts In-Stock

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Digiode

USA . 5,229 parts In-Stock

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Bristol Electronics

USA . 154 parts In-Stock

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ECAB

Sweden . 16 parts In-Stock

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R&J Components

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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Sinequanon

UK . 2 parts In-Stock

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LWI Electronics Inc

India . 1 parts In-Stock

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PC Components Company LLC

USA . 1 parts In-Stock

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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Resion

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Lakeview Electronics

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Distributors (Availability)

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Parana Technologies

USA . 1,706 parts In-Stock

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$0.592

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$1.676

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1,706

$0.592

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DigiPath Technology Company

USA . 800 parts In-Stock

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$0.652

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$0.600

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$0.652

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ChromeModa Solutions

Germany . 5,558 parts In-Stock

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$0.665

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$0.545

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IDEA Electronic Components Group

UK . 150 parts In-Stock

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$0.598

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AZTECH Wire

Italy . 686 parts In-Stock

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$8.183

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One Stop Electronics

USA . 519 parts In-Stock

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$39.050

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Corohmni

South Africa . 262 parts In-Stock

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TANS Electronics

Latvia . 7,343 parts In-Stock

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Problanco Electronics

Mexico . 6,695 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 3,443 parts In-Stock

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Microchip USA

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Northwest PG Solutions

USA . 1,768 parts In-Stock

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SupplyDigital Components

Austria . 1,094 parts In-Stock

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Native Components

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Perfect Parts

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RTC Component Inc.

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Technical Specifications

Unijunction Transistors (UFT) 2N1671B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.47

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N1671B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-469-9886, 5961004699886, 5961-00-990-4605, 5961009904605, 5961-15-053-2261, 5961150532261, 5961-99-118-5695, 5961991185695

NIIN

004699886, 009904605, 150532261, 991185695

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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