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2N1671C

Onsemi

2N1671C by Onsemi

The Onsemi 2N1671C is a Unijunction Transistor (UFT) with max emitter current of 50mA, max power dissipation of 0.45W, and max operating temp of 140 °C. It is used for switching applications due to its single configuration and silicon element material.

Median Price

$89.000

Lifecycle Status

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9

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American Microsemiconductor Inc.

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Bristol Electronics

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DigiKey Marketplace

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Manoshevitz Elec. Sales

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Corohmni

South Africa . 472 parts In-Stock

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Problanco Electronics

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Microchip USA

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Northwest PG Solutions

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Overview

Looking for a reliable switching solution? Look no further than the 2N1671C by Onsemi! Known for their high-quality components, Onsemi delivers top-notch Unijunction Transistors that are perfect for various applications. With a maximum emitter current of 50 mA and a sturdy metal package body material, this transistor offers excellent performance and durability. Trust Onsemi to provide you with a product that is not only efficient but also cost-effective. Upgrade your electronics with the 2N1671C and experience the difference today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and durability, ensuring reliable performance under various operating conditions.

Maximum Emitter Current: 50 mA

High maximum emitter current allows for efficient switching operations and handling of larger loads.

Maximum Inter-base Voltage: 35 V

Having a high inter-base voltage rating ensures reliable operation and protection against potential voltage spikes.

Maximum Power Dissipation (Abs): 0.45 W

With a high maximum power dissipation, this UFT can handle power efficiently without overheating.

Maximum Operating Temperature: 140 °C

Wide operating temperature range allows for versatility in different applications and environments.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low static inter-base resistance ensures efficient switching performance and minimal power loss.

Minimum Valley Point Current: 8 mA

Having a low valley point current allows for precise control and stability during switching operations.

Technical Specifications

Unijunction Transistors (UFT) 2N1671C attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

35 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.47

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N1671C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-116-6553, 5961001166553

NIIN

001166553

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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