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2N4893

Texas Instruments

2N4893 by Texas Instruments

2N4893 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. It is commonly used for switching applications due to its single configuration and silicon element material, operating in temperatures ranging from -55°C to 150°C.

Median Price

$20.240

Lifecycle Status

Suppliers In-Stock

9

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1k+

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$20.240

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Sensible Micro Corp

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EMSNET

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PUI

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LittleDiode

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Parana Technologies

USA . 502 parts In-Stock

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$1.168

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$1.974

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DigiPath Technology Company

USA . 2,280 parts In-Stock

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$1.286

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$1.183

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ChromeModa Solutions

Germany . 899 parts In-Stock

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IDEA Electronic Components Group

UK . 683 parts In-Stock

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Northwest PG Solutions

USA . 1,174 parts In-Stock

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AZTECH Wire

Italy . 743 parts In-Stock

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One Stop Electronics

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Glotronic Ltd.

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Corphita

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Native Components

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Assy Fe

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Overview

Enhance your electronic projects with the Texas Instruments 2N4893 Unijunction Transistor! Crafted with precision and quality, Texas Instruments ensures that this transistor delivers top-notch performance in switching applications. With a maximum emitter current of 50 mA and a maximum power dissipation of 0.3W, this transistor offers reliability and efficiency. Perfect for various electronic devices, the 2N4893 is a versatile component that will take your projects to the next level. Upgrade your circuits today and experience the exceptional value and benefits this transistor has to offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, making it a reliable choice for various applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in turning on and off electrical signals.

Maximum Emitter Current: 50 mA

With a high maximum emitter current, this transistor can handle larger power loads, making it suitable for a wide range of applications.

Package Shape: ROUND

The round shape of the package allows for easier mounting and installation in various electronic devices.

Terminal Form: WIRE

The wire terminals provide a secure and reliable connection, ensuring stable operation of the transistor in circuits.

Maximum Inter-base Voltage: 25 V

The high maximum inter-base voltage tolerance allows the transistor to withstand higher voltage levels without damage.

No. of Terminals: 3

The three terminals provide flexibility in circuit connections, allowing for versatile use in different configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 watts, this transistor can effectively handle heat generated during operation, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and easy integration into various electronic circuits and systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to operate effectively in a wide range of environmental conditions.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, making this transistor a durable choice for long-term use.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature tolerance ensures that the transistor remains operational even in cold environments.

Minimum Intrinsic Stand-off Ratio: 0.55

The minimum intrinsic stand-off ratio ensures stable and controlled switching behavior in the transistor, making it a reliable choice for switching applications.

Maximum Static Inter-Base Resistance: 12 kohm

The high maximum static inter-base resistance allows for better isolation between the base terminals, reducing interference and improving signal integrity.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to connect the transistor in circuits, simplifying the overall design and installation process.

Maximum Intrinsic Stand-off Ratio: 0.82

The high maximum intrinsic stand-off ratio ensures reliable and consistent performance in switching applications, making this transistor a dependable choice.

Minimum Static Inter-Base Resistance: 4 kohm

The low minimum static inter-base resistance helps in reducing signal loss and improving efficiency in the transistor's operation.

Minimum Valley Point Current: 2 mA

The minimum valley point current ensures that the transistor remains stable and does not accidentally trigger under low current conditions.

Maximum Peak Point Current: 2 mA

With a maximum peak point current of 2 mA, this transistor can handle short bursts of high current without damage, ensuring reliability in operation.

Technical Specifications

Unijunction Transistors (UFT) 2N4893 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

25 V

Maximum Intrinsic Stand-off Ratio:

.82

Minimum Intrinsic Stand-off Ratio:

.55

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

2 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

12 kohm

Minimum Static Inter-Base Resistance:

4 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4893 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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