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2N4891

Texas Instruments

2N4891 by Texas Instruments

2N4891 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.3W. Ideal for switching applications, it operates b/w -55 to 150 °C, with a min static inter-base resistance of 4kohm and max peak point current of 5mA.

Median Price

$24.620

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Master Electronics

USA . 52 parts In-Stock

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$24.620

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Digiode

USA . 2,541 parts In-Stock

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$23.389

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Vyrian

USA . 4,284 parts In-Stock

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ComSIT Distribution GmbH

Germany . 400 parts In-Stock

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GES GmbH

Germany . 190 parts In-Stock

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Sogenti Electronics

Canada . 100 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 68 parts In-Stock

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ECAB

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Parana Technologies

USA . 2,368 parts In-Stock

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$0.306

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$1.549

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DigiPath Technology Company

USA . 393 parts In-Stock

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$0.337

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$0.310

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ChromeModa Solutions

Germany . 5,237 parts In-Stock

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IDEA Electronic Components Group

UK . 2,170 parts In-Stock

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Corphita

USA . 3,824 parts In-Stock

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Northwest PG Solutions

USA . 2,327 parts In-Stock

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Overview

Unlock the power of reliable switching with the Texas Instruments 2N4891 Unijunction Transistor. Designed for optimal performance, this high-quality component offers seamless functionality in various applications. With a maximum emitter current of 50 mA and a package style that is both durable and practical, this transistor is perfect for your switching needs. Trust in Texas Instruments' reputation for excellence and experience the value and benefits of the 2N4891 firsthand. Upgrade your electronics today with this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate the transistor into electronic devices.

Transistor Application: SWITCHING

Ideal for applications that require rapid switching between on and off states, providing efficient operation.

Maximum Emitter Current: 50 mA

Can handle up to 50 mA of current, making it suitable for a variety of low-power applications.

Package Shape: ROUND

A compact and space-saving design that allows for easy mounting in various devices.

Terminal Form: WIRE

Provides a secure and reliable connection for the transistor within a circuit.

Maximum Inter-base Voltage: 25 V

Offers high voltage tolerance, allowing the transistor to operate in higher voltage circuits.

No. of Terminals: 3

Simplifies the connection process and ensures proper functioning within a circuit.

Maximum Power Dissipation (Abs): 0.3 W

Can dissipate heat effectively, preventing overheating and ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

Provides a sturdy and compact package design suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Transistor Element Material: SILICON

Offers high reliability and performance, ensuring consistent operation over time.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without compromising performance.

Minimum Intrinsic Stand-off Ratio: 0.55

Provides a good balance between forward and reverse bias operation, ensuring stable performance.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low resistance allows for efficient current flow, enhancing overall transistor performance.

Terminal Position: BOTTOM

Easy to connect within a circuit and provides a secure mounting position.

Maximum Intrinsic Stand-off Ratio: 0.82

Allows for optimal bias operation, maximizing transistor efficiency.

Minimum Static Inter-Base Resistance: 4 kohm

Ensures reliable current flow and performance, even under varying operating conditions.

Minimum Valley Point Current: 2 mA

Ensures proper switching behavior and performance in low-current applications.

Maximum Peak Point Current: 5 mA

Capable of handling peak currents without compromising performance, suitable for transient loads.

Technical Specifications

Unijunction Transistors (UFT) 2N4891 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

25 V

Maximum Intrinsic Stand-off Ratio:

.82

Minimum Intrinsic Stand-off Ratio:

.55

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

5 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

4 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4891 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-471-2528, 5961004712528, 5961-14-391-1907, 5961143911907

NIIN

004712528, 143911907

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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