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2N4949

Onsemi

2N4949 by Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Inter-base Voltage: 25 V; Transistor Element Material: SILICON;

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

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Ace Electronics

USA . 1 parts In-Stock

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$5.000

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1

$5.000

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TEDSS.com

USA . 4 parts In-Stock

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$15.000

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$15.000

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American Microsemiconductor Inc.

USA . 137 parts In-Stock

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$825.000

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137

$825.000

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Vyrian

USA . 8,874 parts In-Stock

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Digiode

USA . 3,615 parts In-Stock

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3,615

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PUI

USA . 270 parts In-Stock

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270

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QIE Inc.

USA . 48 parts In-Stock

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48

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Tech-Mark Corp

USA . 16 parts In-Stock

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ES Components

USA . 10 parts In-Stock

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Lakeland Logistics Inc

USA . 8 parts In-Stock

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8

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Extreme Components

USA . 8 parts In-Stock

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8

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Bristol Electronics

USA . 8 parts In-Stock

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8

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Electronic Expediters

USA . 6 parts In-Stock

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ECAB

Sweden . 3 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 508 parts In-Stock

1+ parts

$1.308

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508

$1.308

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Parana Technologies

USA . 917 parts In-Stock

1+ parts

$1.621

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$2.245

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917

$1.621

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$2.245

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DigiPath Technology Company

USA . 1,645 parts In-Stock

1+ parts

$1.785

100+ parts

$1.642

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$1.785

$1.642

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ChromeModa Solutions

Germany . 2,886 parts In-Stock

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$1.821

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$1.493

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IDEA Electronic Components Group

UK . 1,798 parts In-Stock

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$1.821

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$1.639

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$1.639

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Corohmni

South Africa . 169 parts In-Stock

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$5.000

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169

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AZTECH Wire

Italy . 407 parts In-Stock

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$18.534

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407

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One Stop Electronics

USA . 406 parts In-Stock

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$62.050

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Problanco Electronics

Mexico . 5,686 parts In-Stock

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TANS Electronics

Latvia . 4,931 parts In-Stock

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Corphita

USA . 4,641 parts In-Stock

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Northwest PG Solutions

USA . 4,081 parts In-Stock

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SupplyDigital Components

Austria . 3,524 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Kulean Microsystems

USA . 2,191 parts In-Stock

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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649

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Assy Fe

Spain . 20 parts In-Stock

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Technical Specifications

Unijunction Transistors (UFT) 2N4949 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Case Connection:

BASE2

Configuration:

Maximum Emitter Current:

50 mA

Maximum Inter-base Voltage:

25 V

Maximum Intrinsic Stand-off Ratio:

.86

Minimum Intrinsic Stand-off Ratio:

.74

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

1 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

12 kohm

Minimum Static Inter-Base Resistance:

4 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

2 mA

Trade Compliance

2N4949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-497-0988, 5961004970988, 5961-00-761-4504, 5961007614504, 5961-99-118-9313, 5961991189313

NIIN

004970988, 007614504, 991189313

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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