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2N492

Texas Instruments

2N492 by Texas Instruments

2N492 by Texas Instruments is a Unijunction Transistor (UFT) with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. It is used for switching applications due to its silicon element material and isolated case connection.

Median Price

$29.538

Lifecycle Status

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10

In-Stock Inventory

1k+

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Freelance Electronics

USA . 7 parts In-Stock

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$19.447

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$20.419

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American Microsemiconductor Inc.

USA . 135 parts In-Stock

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$39.630

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Vyrian

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Digiode

USA . 1,634 parts In-Stock

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Electronic Expediters

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First Choice Components Inc.

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Resion

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Parana Technologies

USA . 1,077 parts In-Stock

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$1.099

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$1.938

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DigiPath Technology Company

USA . 448 parts In-Stock

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ChromeModa Solutions

Germany . 6,909 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 743 parts In-Stock

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One Stop Electronics

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Overview

Looking for a reliable and high-quality Unijunction Transistor (UFT)? Look no further than the 2N492 by Texas Instruments. With its sturdy metal package body, single configuration, and excellent switching capabilities, this transistor is perfect for a wide range of applications. Whether you're working on electronic projects or industrial automation systems, the 2N492 offers exceptional performance and durability. Trust Texas Instruments to provide you with cutting-edge technology that delivers value and reliability every time. Choose the 2N492 for all your transistor needs and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body material provides durability and efficient heat dissipation, making this UFT suitable for high-performance applications.

Maximum Emitter Current: 70 mA

With a high maximum emitter current of 70 mA, this UFT is capable of handling heavy loads and can be used in circuits with higher power requirements.

Maximum Inter-base Voltage: 65 V

The high maximum inter-base voltage of 65 V ensures reliable performance and protection against voltage spikes, making this UFT suitable for various applications.

Maximum Power Dissipation (Abs): 0.45 W

With a maximum power dissipation of 0.45 W, this UFT can handle moderate power levels without overheating, ensuring long-term reliability.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140°C allows this UFT to operate in a wide range of environmental conditions without compromising performance, making it versatile and reliable.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C ensures that this UFT can perform even in extreme cold environments, providing flexibility in usage scenarios.

Technical Specifications

Unijunction Transistors (UFT) 2N492 attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N492 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-702-3777, 5961007023777, 5961-00-819-1611, 5961008191611, 5961-00-926-7310, 5961009267310, 5961-14-230-1595, 5961142301595, 5961-99-118-0274, 5961991180274

NIIN

007023777, 008191611, 009267310, 142301595, 991180274

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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