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2N492B

Texas Instruments

2N492B by Texas Instruments

2N492B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.

Median Price

$15.610

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$15.610

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Vyrian

USA . 8,318 parts In-Stock

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Digiode

USA . 3,362 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 27 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Parana Technologies

USA . 437 parts In-Stock

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$0.940

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$1.849

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437

$0.940

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$1.849

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DigiPath Technology Company

USA . 1,301 parts In-Stock

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$1.035

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$0.952

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1,301

$1.035

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ChromeModa Solutions

Germany . 4,213 parts In-Stock

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$1.056

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$0.866

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$1.056

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IDEA Electronic Components Group

UK . 1,814 parts In-Stock

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$1.056

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$0.950

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AZTECH Wire

Italy . 218 parts In-Stock

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$14.926

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Corohmni

South Africa . 401 parts In-Stock

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One Stop Electronics

USA . 1,632 parts In-Stock

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$64.050

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Kulean Microsystems

USA . 6,488 parts In-Stock

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SupplyDigital Components

Austria . 3,616 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 2,569 parts In-Stock

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Northwest PG Solutions

USA . 1,766 parts In-Stock

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Native Components

USA . 1,105 parts In-Stock

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TANS Electronics

Latvia . 1,091 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality 2N492B Unijunction Transistor from Texas Instruments. Known for their superior design and reliability, Texas Instruments offers a range of innovative components for various applications. The 2N492B is ideal for switching circuits, with a maximum emitter current of 70 mA and a maximum peak point current of 6 mA. Trust in Texas Instruments to deliver exceptional performance and efficiency in every project you pursue. Elevate your designs with the 2N492B and experience unmatched value and benefits today.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better thermal conductivity and heat dissipation, making the transistor more reliable in high power applications.

Maximum Emitter Current: 70 mA

With a high maximum emitter current, this UFT can handle larger loads and is suitable for switching applications that require higher current ratings.

Maximum Inter-base Voltage: 65 V

The high maximum inter-base voltage allows for reliable operation in circuits where voltage spikes or transients are common.

Maximum Power Dissipation (Abs): 0.45 W

This UFT can dissipate up to 0.45 watts of power, making it suitable for applications that require high power handling capabilities.

Maximum Operating Temperature: 140 °C

With a maximum operating temperature of 140°C, this transistor can withstand higher temperature environments, increasing its versatility.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C ensures reliable performance even in extremely cold conditions.

Maximum Static Inter-Base Resistance: 9.1 kohm

Low inter-base resistance helps in reducing signal loss and improving the overall efficiency of the UFT in switching applications.

Maximum Peak Point Current: 6 mA

The low peak point current ensures the transistor operates within safe limits, protecting it from damage in case of transient current spikes.

Technical Specifications

Unijunction Transistors (UFT) 2N492B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N492B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-902-1185, 5961009021185

NIIN

009021185

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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