Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi 2N2418B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for low current operations at temperatures ranging from -65 to 140 °C.
Median Price
$20.260
Lifecycle Status
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3
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1k+
American Microsemiconductor Inc.
1+ parts
100+ parts
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Digiode
Vyrian
Corohmni
TANS Electronics
SupplyDigital Components
Kulean Microsystems
Problanco Electronics
UHIMA Technologies
Northwest PG Solutions
Native Components
Corphita
The use of metal as the package body material provides durability and protection for the transistor, ensuring it can withstand harsh environmental conditions.
With a high maximum emitter current of 70 mA, this transistor is suitable for applications requiring high current flow.
The low maximum power dissipation of 0.3 W indicates that this transistor is efficient and does not generate excessive heat during operation.
The high maximum operating temperature of 140 °C allows this transistor to be used in a wide range of temperature environments without malfunctioning.
Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a reliable choice for electronic circuits.
Unijunction Transistors (UFT) 2N2418B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi
Configuration:
Maximum Emitter Current:
Maximum Inter-base Voltage:
Maximum Intrinsic Stand-off Ratio:
Minimum Intrinsic Stand-off Ratio:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Maximum Peak Point Current:
Maximum Power Dissipation (Abs):
Maximum Static Inter-Base Resistance:
Minimum Static Inter-Base Resistance:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
Minimum Valley Point Current:
2N2418B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Itt Semiconductor
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Weitron Technology
BSS123,215
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
BSS138-7-F
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
BAV99
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Microsemi
M39029/58-360
Fct Electronic
CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;
Pro-an Electronic
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
SMBJ18CA
Jgd Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
LM317T
Texas Instruments
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
2N491B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Operating Temperature: 140 Cel; Maximum Inter-base Voltage: 65 V;
2N2646
General Electric Solid State
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Intrinsic Stand-off Ratio: .56; Minimum Static Inter-Base Resistance: 4.7 kohm; Maximum Static Inter-Base Resistance: 9.1 kohm;
2N2419B
The Onsemi 2N2419B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for functions like pulse generation or timing circuits.
2N2417B
The Onsemi 2N2417B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for temperature ranges b/w -65 to 140 °C.
P2647
P2647 by Onsemi is a Unijunction Transistor with key specs: Min. Intrinsic Stand-off Ratio 0.68, Max. Static Inter-Base Resistance 9.1 kohm, and Min. Valley Point Current 4 mA. It is used in applications requiring precise triggering and timing control in electronic circuits.
2N493A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Minimum Operating Temperature: -65 Cel;
2SH21
Toshiba
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Intrinsic Stand-off Ratio: .85; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Static Inter-Base Resistance: 4 kohm;
2N492B
2N492B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.
Boca Semiconductor
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 35 V;
2N494B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Intrinsic Stand-off Ratio: .62; Transistor Application: SWITCHING;
P2646
Onsemi's P2646 is a Unijunction Transistor with key specs: Min. Stand-off Ratio 0.56, Max. Inter-Base Resistance 9.1 kohm, Min. Valley Point Current 4 mA. Ideal for applications requiring precise triggering and control in electronic circuits.
Comset Semiconductors
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA; Maximum Inter-base Voltage: 35 V;
Philips Semiconductors
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Maximum Static Inter-Base Resistance: 9.1 kohm; Terminal Finish: Tin/Lead (Sn/Pb);
2N4853
2N4853 by Texas Instruments is a Unijunction Transistor with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. It is used for switching applications due to its single configuration and silicon element material.
2N2646 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA, ideal for switching applications. It has a max operating temperature of 125°C and min intrinsic stand-off ratio of 0.56, making it suitable for various electronic circuits. With a package style of cylindrical and terminal form as wire, it offers reliable performance in diverse environments.
2N4946
New Jersey Semiconductor Products
Unijunction Transistors; Configuration: SINGLE; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
2N3980
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Emitter Current: 50 mA; Minimum Operating Temperature: -65 Cel;
NTE6400A
Nte Electronics
NTE6400A by Nte Electronics is a Unijunction Transistor (UFT) with 3 terminals, made of silicon. It has a max emitter current of 50 mA and can handle up to 55 V inter-base voltage. Ideal for switching applications due to its low static inter-base resistance and high intrinsic stand-off ratio.
2N493
The Texas Instruments 2N493 is a Unijunction Transistor (UFT) with a max emitter current of 70mA, ideal for switching applications. It has a max inter-base voltage of 65V and can operate in temperatures ranging from -65 to 140°C. The transistor element material is silicon, with a package style that is cylindrical in shape.
2N4870
Harris Semiconductor
Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA;
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2N2417A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Minimum Operating Temperature: -65 Cel;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Transistor Element Material: SILICON;
2N2418A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; JEDEC-95 Code: TO-18;
2N2419A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Package Body Material: METAL;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W3; Minimum Valley Point Current: 8 mA;
2N2420A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Package Body Material: METAL;
2N2420B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .68; Package Body Material: METAL;
2N2421A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Peak Point Current: 12 mA;
2N2421B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Intrinsic Stand-off Ratio: .75;
2N2422A
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Maximum Emitter Current: 70 mA;
2N2418
Digitron Semiconductors
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum Operating Temperature: -65 Cel; Minimum Static Inter-Base Resistance: 6.2 kohm;
Central Semiconductor
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Intrinsic Stand-off Ratio: .51; Package Shape: ROUND;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 65 V; Maximum Emitter Current: 70 mA;
2N2418B
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Maximum Operating Temperature: 140 Cel;
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Maximum Emitter Current: 70 mA;
2N2419-PBF
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; No. of Terminals: 3; Maximum Static Inter-Base Resistance: 6.8 kohm;
2N2418B-PBF
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum Static Inter-Base Resistance: 6.2 kohm; Package Style (Meter): CYLINDRICAL;
2N2417HR
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Package Style (Meter): CYLINDRICAL; Package Body Material: METAL;
2N2419AHR
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum Valley Point Current: 8 mA; No. of Elements: 1;
2N2419B-PBF
Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum Valley Point Current: 8 mA; Maximum Static Inter-Base Resistance: 6.8 kohm;
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