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2N2418B

Onsemi

2N2418B by Onsemi

The Onsemi 2N2418B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for low current operations at temperatures ranging from -65 to 140 °C.

Median Price

$20.260

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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Digiode

USA . 2,463 parts In-Stock

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Vyrian

USA . 2,329 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 195 parts In-Stock

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TANS Electronics

Latvia . 8,384 parts In-Stock

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SupplyDigital Components

Austria . 4,545 parts In-Stock

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Kulean Microsystems

USA . 1,489 parts In-Stock

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Problanco Electronics

Mexico . 1,020 parts In-Stock

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UHIMA Technologies

Türkiye . 903 parts In-Stock

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Northwest PG Solutions

USA . 271 parts In-Stock

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Native Components

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Corphita

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Overview

Looking for a reliable and high-quality Unijunction Transistor (UJT) for your electronic projects? Look no further than the 2N2418B by Onsemi! With a solid reputation for manufacturing excellence, Onsemi delivers exceptional performance and durability in their products. The 2N2418B is perfect for applications requiring precise control of timing circuits, oscillators, and pulse generators. Its single configuration, wire terminals, and cylindrical package make it easy to integrate into your designs. Trust Onsemi's 2N2418B to provide value, efficiency, and reliability for all your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and protection for the transistor, ensuring it can withstand harsh environmental conditions.

Maximum Emitter Current: 70 mA

With a high maximum emitter current of 70 mA, this transistor is suitable for applications requiring high current flow.

Maximum Power Dissipation (Abs): 0.3 W

The low maximum power dissipation of 0.3 W indicates that this transistor is efficient and does not generate excessive heat during operation.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140 °C allows this transistor to be used in a wide range of temperature environments without malfunctioning.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a reliable choice for electronic circuits.

Technical Specifications

Unijunction Transistors (UFT) 2N2418B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.51

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2418B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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