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2N2417A

Onsemi

2N2417A by Onsemi

The Onsemi 2N2417A is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring precise triggering such as pulse generators and timing circuits due to its single configuration and silicon element material.

Median Price

$23.050

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 148 parts In-Stock

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Vyrian

USA . 2,095 parts In-Stock

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Digiode

USA . 1,472 parts In-Stock

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Prism Electronics

USA . 15 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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$23.050

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Native Components

USA . 296 parts In-Stock

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$25.610

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Northwest PG Solutions

USA . 1,361 parts In-Stock

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$28.171

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$25.354

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TANS Electronics

Latvia . 5,670 parts In-Stock

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SupplyDigital Components

Austria . 2,069 parts In-Stock

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Kulean Microsystems

USA . 1,691 parts In-Stock

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UHIMA Technologies

Türkiye . 808 parts In-Stock

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Problanco Electronics

Mexico . 708 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Discover the Onsemi 2N2417A, a high-quality Unijunction Transistor designed to meet your electronic needs with precision and reliability. Manufactured by Onsemi, a trusted industry leader, this product offers exceptional performance and durability. Ideal for a wide range of applications, this single-configured transistor boasts a maximum emitter current of 70mA and a maximum peak point current of 12mA. With its robust construction and efficient design, the 2N2417A delivers superior value and benefits to customers seeking top-notch electronic components. Experience the difference with Onsemi's 2N2417A and elevate your projects to new heights of excellence.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, making the transistor more reliable and allowing it to operate at higher power levels.

Maximum Emitter Current: 70 mA

High maximum emitter current allows the transistor to handle larger loads and operate more efficiently in various applications.

Maximum Operating Temperature: 140 °C

High maximum operating temperature ensures the transistor can withstand harsh environmental conditions without degrading performance.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the transistor to operate in cold environments without any issues.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation helps in reducing energy wastage and prevents the transistor from overheating during operation.

Maximum Inter-base Voltage: 65 V

High inter-base voltage rating provides better switching capabilities and protection against voltage spikes.

No. of Terminals: 3

Having 3 terminals allows for easy mounting and connection in circuits, providing flexibility in design and integration.

Technical Specifications

Unijunction Transistors (UFT) 2N2417A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.51

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2417A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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