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2N2417B

Onsemi

2N2417B by Onsemi

The Onsemi 2N2417B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for temperature ranges b/w -65 to 140 °C.

Median Price

$34.010

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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Digiode

USA . 2,131 parts In-Stock

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Vyrian

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PUI

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Native Components

USA . 924 parts In-Stock

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$12.220

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Northwest PG Solutions

USA . 1,603 parts In-Stock

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$12.098

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Corohmni

South Africa . 87 parts In-Stock

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Problanco Electronics

Mexico . 8,139 parts In-Stock

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SupplyDigital Components

Austria . 1,462 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 1,136 parts In-Stock

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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Corphita

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Overview

Elevate your electronic projects with the 2N2417B by Onsemi, a top-quality Unijunction Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a wide range of applications. Whether you're a hobbyist or a professional, this single configuration transistor provides exceptional value, benefits, and advantages. Trust Onsemi's expertise and choose the 2N2417B for all your electronics needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides good heat dissipation and durability, making the UFT reliable in various operating conditions.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for efficient performance in applications that require higher current flows.

Maximum Inter-base Voltage: 65 V

High inter-base voltage rating ensures safe operation in circuits with higher voltage requirements.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation helps in reducing heat buildup, improving the overall efficiency and reliability of the UFT.

Maximum Operating Temperature: 140 °C

Wide operating temperature range makes the UFT suitable for use in both low and high-temperature environments.

Maximum Static Inter-Base Resistance: 6.8 kohm

Low static inter-base resistance ensures minimal signal loss and distortion in the circuit.

Maximum Intrinsic Stand-off Ratio: 0.62

High intrinsic stand-off ratio provides better turn-off characteristics and stability in the UFT operation.

Minimum Valley Point Current: 8 mA

Low valley point current ensures reliable switching performance and avoids false triggering of the UFT.

Technical Specifications

Unijunction Transistors (UFT) 2N2417B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Onsemi

Specs

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.62

Minimum Intrinsic Stand-off Ratio:

.51

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N2417B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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