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2N492A

Texas Instruments

2N492A by Texas Instruments

2N492A by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range of -65 to 140°C, and package style in cylindrical shape. With a min static inter-base resistance of 6.2kohm and max peak point current of 12mA, it is ideal for low-power electronic circuits.

Median Price

$21.480

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 7 parts In-Stock

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$21.480

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$21.480

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Digiode

USA . 4,707 parts In-Stock

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4,707

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Vyrian

USA . 4,261 parts In-Stock

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4,261

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Electronic Expediters

USA . 10 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,361 parts In-Stock

1+ parts

$0.919

100+ parts

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$1.837

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2,361

$0.919

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$1.837

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DigiPath Technology Company

USA . 316 parts In-Stock

1+ parts

$1.012

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$0.931

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316

$1.012

$0.931

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ChromeModa Solutions

Germany . 2,181 parts In-Stock

1+ parts

$1.033

100+ parts

$0.847

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2,181

$1.033

$0.847

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IDEA Electronic Components Group

UK . 187 parts In-Stock

1+ parts

$1.033

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$0.930

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187

$1.033

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$0.930

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One Stop Electronics

USA . 1,460 parts In-Stock

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$1.050

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1,460

$1.050

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Northwest PG Solutions

USA . 2,111 parts In-Stock

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$2.204

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$2.204

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AZTECH Wire

Italy . 403 parts In-Stock

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$17.884

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Corohmni

South Africa . 496 parts In-Stock

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$21.480

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Problanco Electronics

Mexico . 7,570 parts In-Stock

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Corphita

USA . 5,907 parts In-Stock

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Kulean Microsystems

USA . 3,046 parts In-Stock

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SupplyDigital Components

Austria . 1,794 parts In-Stock

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TANS Electronics

Latvia . 1,202 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 388 parts In-Stock

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Overview

Unleash the full potential of your electronic projects with the 2N492A by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers yet again with this versatile Unijunction Transistor. Whether you're looking to improve switching applications or enhance the performance of your circuits, the 2N492A is the perfect solution. With its high emitter current, durable metal package body material, and wide operating temperature range, this transistor offers unmatched value and benefits to customers. Upgrade your projects today with the power of Texas Instruments!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and better heat dissipation, ensuring reliability in various environmental conditions.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easy to use in different applications.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient control of current flow and voltage switching.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for handling higher loads, making it suitable for a wide range of applications.

Package Shape: ROUND

Round package shape facilitates easy mounting and assembly, making it suitable for space-constrained environments.

Terminal Form: WIRE

Wire terminal form provides easy connectivity and ensures reliable electrical connections.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage allows for voltage isolation and protection against voltage spikes.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 0.45 W

High maximum power dissipation ensures stable performance under varying load conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides structural integrity and ease of handling during installation.

Maximum Operating Temperature: 140 °C

Wide maximum operating temperature range allows for reliable performance in both high and low-temperature environments.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability in electronic circuits.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures operation in extreme cold conditions.

Minimum Intrinsic Stand-off Ratio: 0.56

High minimum intrinsic stand-off ratio provides better isolation and protection against voltage spikes.

Maximum Static Inter-Base Resistance: 9.1 kohm

High maximum static inter-base resistance ensures stable performance in switching applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and PCB layout.

Case Connection: ISOLATED

Isolated case connection provides protection against electrical interference and improves circuit reliability.

Maximum Intrinsic Stand-off Ratio: 0.68

High maximum intrinsic stand-off ratio offers enhanced protection against voltage transients and spikes.

Minimum Static Inter-Base Resistance: 6.2 kohm

Low minimum static inter-base resistance ensures efficient switching and control of current flow.

Minimum Valley Point Current: 8 mA

Low minimum valley point current ensures smooth operation and control in switching applications.

Maximum Peak Point Current: 12 mA

High maximum peak point current allows for handling short-duration peak loads effectively.

Technical Specifications

Unijunction Transistors (UFT) 2N492A attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

12 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N492A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-926-7310, 5961009267310

NIIN

009267310

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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