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2N494B

Texas Instruments

2N494B by Texas Instruments

The Texas Instruments 2N494B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and power dissipation of 0.45W. It operates b/w -65°C to 140°C, with static inter-base resistance ranging from 6.2kohm to 9.1kohm. Ideal for applications requiring precise triggering and timing control in electronic circuits.

Median Price

$14.400

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Bristol Electronics

USA . 28 parts In-Stock

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Vyrian

USA . 7,328 parts In-Stock

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Digiode

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PUI

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Odintec Ltd.

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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Native Components

USA . 678 parts In-Stock

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$0.031

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$0.029

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Parana Technologies

USA . 1,103 parts In-Stock

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$0.708

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$1.739

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DigiPath Technology Company

USA . 547 parts In-Stock

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$0.779

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$0.717

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ChromeModa Solutions

Germany . 4,075 parts In-Stock

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$0.795

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$0.652

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IDEA Electronic Components Group

UK . 2,273 parts In-Stock

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$0.716

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AZTECH Wire

Italy . 889 parts In-Stock

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One Stop Electronics

USA . 1,172 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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Corphita

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SupplyDigital Components

Austria . 2,169 parts In-Stock

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Northwest PG Solutions

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UHIMA Technologies

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Corohmni

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Overview

Looking for a reliable and high-quality Unijunction Transistor (UFT)? Look no further than the 2N494B by Texas Instruments. With a maximum emitter current of 70 mA and a maximum power dissipation of 0.45 W, this component is designed to deliver top-notch performance in various applications. From industrial automation to consumer electronics, the 2N494B offers unmatched value, benefits, and advantages to customers seeking a dependable solution for their projects. Trust Texas Instruments to provide innovative technology that meets your needs.

Feature Benefit Bullets

Maximum Emitter Current: 70 mA

High maximum emitter current allows for efficient performance and flexibility in a variety of applications.

Maximum Inter-base Voltage: 65 V

The high maximum inter-base voltage ensures safe and reliable operation in diverse circuits.

Maximum Power Dissipation (Abs): 0.45 W

The low power dissipation results in less heat generation and energy efficiency.

Maximum Operating Temperature: 140 °C

Wide operating temperature range enables usage in different environmental conditions.

Minimum Operating Temperature: -65 °C

The ability to operate in extremely low temperatures makes this product suitable for various industries.

Minimum Intrinsic Stand-off Ratio: 0.62

The minimum intrinsic stand-off ratio ensures stability and reliability in circuit design.

Maximum Static Inter-Base Resistance: 9.1 kohm

High maximum static inter-base resistance helps in reducing signal distortion and noise interference.

Maximum Intrinsic Stand-off Ratio: 0.75

The maximum intrinsic stand-off ratio enhances the performance and durability of the product.

Minimum Static Inter-Base Resistance: 6.2 kohm

Low minimum static inter-base resistance allows for efficient signal transmission and circuit stability.

Minimum Valley Point Current: 8 mA

The minimum valley point current ensures optimal performance and operational reliability.

Maximum Peak Point Current: 6 mA

The maximum peak point current helps in preventing overloading and ensures safe operation.

Technical Specifications

Unijunction Transistors (UFT) 2N494B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.75

Minimum Intrinsic Stand-off Ratio:

.62

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Peak Point Current:

6 mA

Maximum Power Dissipation (Abs):

Maximum Static Inter-Base Resistance:

9.1 kohm

Minimum Static Inter-Base Resistance:

6.2 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Minimum Valley Point Current:

8 mA

Trade Compliance

2N494B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-913-2863, 5961009132863, 5961-99-623-0817, 5961996230817, 5961-99-118-3292, 5961991183292

NIIN

009132863, 996230817, 991183292

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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