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2N491B

Texas Instruments

2N491B by Texas Instruments

2N491B by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.45W. Ideal for low-power switching circuits in various electronic devices.

Median Price

$30.425

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Bristol Electronics

USA . 2 parts In-Stock

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$5.600

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American Microsemiconductor Inc.

USA . 122 parts In-Stock

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$55.250

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Vyrian

USA . 8,899 parts In-Stock

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Digiode

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DF Sales Co.

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DF Sales Co.

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Electronic Expediters

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Resion

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Native Components

USA . 1,439 parts In-Stock

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$0.052

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$0.050

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$0.052

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$0.050

Parana Technologies

USA . 290 parts In-Stock

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$0.390

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$1.582

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$0.390

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$1.582

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DigiPath Technology Company

USA . 2,163 parts In-Stock

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$0.429

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$0.395

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ChromeModa Solutions

Germany . 5,021 parts In-Stock

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$0.438

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$0.359

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IDEA Electronic Components Group

UK . 2,124 parts In-Stock

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$0.438

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$0.394

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AZTECH Wire

Italy . 281 parts In-Stock

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$10.646

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One Stop Electronics

USA . 609 parts In-Stock

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$13.050

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Corohmni

South Africa . 295 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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Problanco Electronics

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Overview

Enhance your electronic projects with the 2N491B by Texas Instruments, a top-of-the-line Unijunction Transistor. Manufactured with quality and precision, this single-switching transistor offers unmatched performance and reliability. With a maximum power dissipation of 0.45 W and a wide operating temperature range, this transistor is perfect for various applications. Whether you're a hobbyist or a professional, the 2N491B provides exceptional value and benefits, making it the ideal choice for your next project. Trust Texas Instruments for superior quality components that deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and efficient heat dissipation, making the transistor reliable for long-term use in various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and offers ease of use in applications requiring a single unijunction transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Maximum Emitter Current: 70 mA

High maximum emitter current allows for handling a wide range of current requirements in different circuits.

Package Shape: ROUND

Round package shape makes it suitable for applications where space is a constraint and allows for easy mounting.

Terminal Form: WIRE

Wire terminals offer flexibility and ease of connection in various circuit layouts.

Maximum Inter-base Voltage: 65 V

High maximum inter-base voltage provides protection against voltage spikes and ensures reliable operation in varying voltage conditions.

No. of Terminals: 3

Three terminals offer versatility in circuit connection options and allow for different circuit configurations.

Maximum Power Dissipation (Abs): 0.45 W

High maximum power dissipation rating ensures the transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact form factor and facilitates easy integration into circuit designs.

Maximum Operating Temperature: 140 °C

High maximum operating temperature allows the transistor to operate in a wide range of temperature environments without any performance degradation.

Transistor Element Material: SILICON

Silicon transistor element material provides good electrical properties, offering high performance and reliability in various applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the transistor operates reliably even in extreme cold conditions.

Minimum Intrinsic Stand-off Ratio: 0.56

A moderate minimum intrinsic standoff ratio provides a good balance between triggering sensitivity and stability in circuit operation.

Maximum Static Inter-Base Resistance: 6.8 kohm

High maximum static inter-base resistance ensures stable operation in switching circuits and improves noise immunity.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount the transistor onto a circuit board, simplifying installation.

Case Connection: ISOLATED

Isolated case connection helps prevent unwanted short circuits and improves overall circuit safety and reliability.

Maximum Intrinsic Stand-off Ratio: 0.68

Higher maximum intrinsic standoff ratio provides greater triggering sensitivity and ensures reliable performance in various circuit conditions.

Minimum Static Inter-Base Resistance: 4.7 kohm

Low minimum static inter-base resistance helps reduce power losses and improves overall efficiency in switching applications.

Minimum Valley Point Current: 8 mA

Low minimum valley point current allows for precise triggering and reliable operation in switching circuits with low current requirements.

Maximum Peak Point Current: 6 mA

Low maximum peak point current ensures safe operation and protects the transistor from excessive current loads, improving longevity.

Technical Specifications

Unijunction Transistors (UFT) 2N491B attributes and parameters. Explore more Unijunction Transistors (UFT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Emitter Current:

70 mA

Maximum Inter-base Voltage:

65 V

Maximum Intrinsic Stand-off Ratio:

.68

Minimum Intrinsic Stand-off Ratio:

.56

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Maximum Peak Point Current:

6 mA

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Static Inter-Base Resistance:

6.8 kohm

Minimum Static Inter-Base Resistance:

4.7 kohm

Sub-Category:

Unijunction Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Minimum Valley Point Current:

8 mA

Trade Compliance

2N491B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-239-9589, 5961002399589, 5961-00-766-2947, 5961007662947

NIIN

002399589, 007662947

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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