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MBRA140T3

Onsemi

MBRA140T3 by Onsemi

MBRA140T3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.71V and output current of 1A. It operates at a max temperature of 125°C, making it suitable for various applications requiring high-speed switching and low power loss in compact electronic devices.

Median Price

$0.104

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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Adafruit Industries

USA . 20 parts In-Stock

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$0.104

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$0.099

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Digiode

USA . 1,947 parts In-Stock

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TEDSS.com

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Component Electronics Inc.

Canada . 940 parts In-Stock

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Mil-Aero Solutions, Inc.

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Semi Source

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ComSIT Distribution GmbH

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Vyrian

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Sinequanon

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Odintec Ltd.

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Bristol Electronics

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Lantek

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Velocity Electronics

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Atlantic Semiconductor

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Prism Electronics

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NexGen Digital

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Pegasus Components GmbH

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Nova Conductors

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PC Components Company LLC

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Whistler Technology

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 20 parts In-Stock

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$0.088

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Semicontronic

India . 20 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

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Corohmni

South Africa . 455 parts In-Stock

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Advanced Electronics

New Zealand . 20 parts In-Stock

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Benley Electronics

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AZTECH Wire

Italy . 368 parts In-Stock

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GreenTree Electronics

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Perfect Parts

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Kulean Microsystems

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TANS Electronics

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A-Z Elektronik GmbH

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Argo Parts USA

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Problanco Electronics

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Continental Prestige Electronics

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SupplyDigital Components

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UHIMA Technologies

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Bastille Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock the power of precision with the MBRA140T3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their diodes & rectifiers. The MBRA140T3 offers seamless integration with its surface mount capability and small outline package style, making it ideal for a wide range of applications. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 40V, this Schottky technology diode provides unmatched performance and efficiency. Experience the difference with Onsemi's MBRA140T3 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation, ensuring durability and safety.

Config: SINGLE

Simplifies circuit design and reduces complexity.

Surface Mount: YES

Enables easy installation on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on circuit boards.

No. of Terminals: 2

Simplifies connection and integration into circuits.

Maximum Operating Temperature: 125 °C

Ensures reliable performance under varying temperature conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Enhances solderability and conductivity for secure connections.

Technology: SCHOTTKY

Offers low forward voltage drop and fast switching capabilities for efficient performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

Suitable for applications requiring moderate reverse voltage protection.

Maximum Output Current: 1 A

Capable of handling moderate current loads in various applications.

Technical Specifications

Diodes & Rectifiers MBRA140T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA140T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-577-1942, 5961015771942

NIIN

015771942

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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