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MBRA340T3

Onsemi

MBRA340T3 by Onsemi

MBRA340T3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.39V and output current of 3A. It is designed for power applications, operating at up to 125°C with a peak reflow temperature of 235°C. The diode has a max repetitive peak reverse voltage of 40V and non-repetitive peak forward current of 100A, making it suitable for various power-related projects.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Freelance Electronics

USA . 1 parts In-Stock

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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Chip Stock

USA . 296,728 parts In-Stock

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Vyrian

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Digiode

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PC Components Company LLC

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Bristol Electronics

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Semi Source

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Velocity Electronics

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Mil-Aero Solutions, Inc.

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Connector Distribution Corp

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Right Parts Inc.

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Nova Conductors

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Distributors (Availability)

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Semicontronic

India . 1,208 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 2,929 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.196

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$0.186

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Ampacity Inc.

Singapore . 1,277 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 462 parts In-Stock

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TANS Electronics

Latvia . 6,142 parts In-Stock

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Continental Prestige Electronics

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Lithuania . 500 parts In-Stock

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Overview

Unleash the power of innovation with the MBRA340T3 by Onsemi, a top-of-the-line Schottky rectifier diode designed to deliver exceptional performance in power applications. Crafted with precision and expertise by industry leader Onsemi, this diode boasts unparalleled quality and reliability. Its compact design, high output current, and low forward voltage make it an ideal choice for a wide range of power-related tasks. Say goodbye to inefficiency and hello to optimized performance with the MBRA340T3. Experience the difference today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the diode, making it suitable for various applications.

Config:

SINGLE - The single configuration simplifies the design and installation of the diode.

Surface Mount:

YES - Being surface mountable allows for easy and efficient PCB assembly.

Package Shape:

RECTANGULAR - The rectangular shape enables space-saving and organized PCB layouts.

No. of Terminals:

2 - With only 2 terminals, the diode is easy to install and connect in circuits.

Package Style (Meter):

SMALL OUTLINE - The small outline package style makes the diode suitable for compact electronic devices.

Application:

POWER - Designed for power applications, ensuring reliable performance under high loads.

Maximum Operating Temperature:

125 °C - The high operating temperature range ensures stable performance in various environments.

Terminal Finish:

Tin/Lead (Sn/Pb) - The tin/lead finish provides excellent solderability for reliable connections.

Terminal Position:

DUAL - Dual terminal position offers flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s):

30 - The short reflow time minimizes the risk of thermal damage during assembly.

Peak Reflow Temperature °C:

235 - With a high peak reflow temperature, the diode can withstand the soldering process effectively.

Diode Type:

RECTIFIER DIODE - A rectifier diode allows for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF):

0.39 V - Low forward voltage drop ensures minimal power loss in the circuit.

Maximum Output Current:

3 A - Capable of handling high output currents for power applications.

Technology:

SCHOTTKY - Schottky technology offers fast switching speeds and low power dissipation.

Terminal Form:

C BEND - The C bend terminal form provides secure and reliable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage:

40 V - The high repetitive peak reverse voltage rating ensures protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current:

100 A - Able to withstand short-term high peak current levels.

Diode Element Material:

SILICON - Silicon diode elements offer high efficiency and reliability in electronic circuits.

Technical Specifications

Diodes & Rectifiers MBRA340T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.39 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA340T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-643-8870, 5961016438870

NIIN

016438870

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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