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M36W0R5020B0ZAQT

STMicroelectronics

M36W0R5020B0ZAQT by STMicroelectronics

M36W0R5020B0ZAQT by STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design (8x10 mm) ensures efficient space utilization in devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,563 parts In-Stock

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4,563

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Digiode

USA . 1,618 parts In-Stock

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1,618

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Anansix

USA . 1,446 parts In-Stock

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1,446

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,155 parts In-Stock

1+ parts

$3.702

100+ parts

-

1k+ parts

$3.332

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1,155

$3.702

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$3.332

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MKK Technologies

India . 1,174 parts In-Stock

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$6.962

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1,174

$6.962

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DigiPath Technology Company

USA . 1,174 parts In-Stock

1+ parts

$6.962

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1,174

$6.962

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Parana Technologies

USA . 1,182 parts In-Stock

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$4.426

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1,182

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$4.426

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Corphita

USA . 645 parts In-Stock

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Overview

Unlock unparalleled performance with the M36W0R5020B0ZAQT from STMicroelectronics, a leader in innovative memory solutions. This high-quality memory IC seamlessly combines the efficiency of FLASH and SRAM, making it ideal for industrial applications requiring reliability under extreme conditions. With its compact design and low power consumption, this versatile component empowers your projects while ensuring longevity and exceptional speed—boosting your product's value and enhancing user experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to various environmental factors, making the product reliable for industrial applications.

Surface Mount: YES

Being a surface mount device allows for easier integration into modern compact circuits, resulting in space savings and streamlined manufacturing.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout designs in circuit boards, allowing for better space utilization and thermal management.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances system responsiveness, reducing latency and improving performance in data processing tasks.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM memory types provides a balance of speed and non-volatility, making it suitable for applications requiring fast access and data retention.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V is ideal for low-power applications, contributing to energy efficiency and longer battery life.

Power Supplies (V): 1.8

Operating on 1.8V power supplies ensures compatibility with various contemporary low-voltage systems.

No. of Terminals: 88

Having 88 terminals allows for comprehensive connectivity, making it versatile for different designs and applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design enable higher density configurations, optimizing space on PCBs for compact designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the product is suitable for high-temperature environments, ensuring reliability under demanding conditions.

Organization: 2MX16

The specific organization of 2MX16 allows efficient memory allocation and data management, facilitating better performance in memory-intensive applications.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40 °C makes this memory IC ideal for extreme environmental conditions often found in industrial applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish enhances solderability and reliability, ensuring stable connections over the life of the product.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for high-density designs, allowing for efficient routing and minimizing board space.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2mm allows for compatibility with low-profile designs, catering to modern compact device applications.

Width: 8 mm

The 8mm width contributes to the compact form factor, enabling integration into space-constrained applications.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V enhances compatibility with a broad range of system voltages, allowing for flexible use in various applications.

Length: 10 mm

A length of 10mm helps maintain a compact design while providing sufficient terminal spacing for easy integration.

Temperature Grade: INDUSTRIAL

The industrial temperature grade assures stability and performance in harsh environments, making it a reliable choice for industrial applications.

Technology: CMOS

The CMOS technology offers low power consumption and high speed, which is essential for modern electronic devices.

Terminal Form: BALL

Ball terminal form facilitates efficient soldering techniques, enabling reliable connections on complex multilayer PCBs.

Maximum Supply Current: 45 mA

With a maximum supply current of 45 mA, this IC manages power effectively, contributing to overall system efficiency.

No. of Words: 2097152 words

The capability to store 2,097,152 words provides ample memory space for data-intensive applications.

Memory Width: 16

A memory width of 16 allows for efficient data processing in parallel, boosting overall performance.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm enables high-density packaging, fitting more connections into limited space.

No. of Words Code: 2M

A 2M word code designation indicates a robust memory capacity, suitable for applications requiring significant data storage.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V provides flexibility in design, accommodating various power supply configurations.

Memory Density: 33554432 bit

With a memory density of 33,554,432 bits, this IC offers substantial storage capacity, essential for advanced applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC meets various memory needs in today’s electronic designs, making it a versatile choice.

Maximum Standby Current: 0.00005 Amp

A minimal maximum standby current of 0.00005 Amp enhances energy efficiency, making it suitable for battery-operated devices.

Maximum Access Time: 70 ns

A maximum access time of 70 ns allows for fast data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W0R5020B0ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R5020B0ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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