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M36LLR8860T1ZAQF

STMicroelectronics

M36LLR8860T1ZAQF by STMicroelectronics

M36LLR8860T1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,986 parts In-Stock

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4,986

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Vyrian

USA . 4,785 parts In-Stock

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4,785

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Anansix

USA . 570 parts In-Stock

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570

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 353 parts In-Stock

1+ parts

$2.200

100+ parts

-

1k+ parts

$1.980

10k+ parts

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353

$2.200

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$1.980

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MKK Technologies

India . 2,128 parts In-Stock

1+ parts

$4.136

100+ parts

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2,128

$4.136

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DigiPath Technology Company

USA . 2,128 parts In-Stock

1+ parts

$4.136

100+ parts

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2,128

$4.136

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Corphita

USA . 4,154 parts In-Stock

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4,154

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Parana Technologies

USA . 250 parts In-Stock

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$2.630

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250

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$2.630

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Overview

Unlock exceptional performance with the M36LLR8860T1ZAQF from STMicroelectronics—a leader in cutting-edge memory solutions. This versatile FLASH+PSRAM chip delivers reliability and efficiency for a wide range of applications, from consumer electronics to industrial automation. Experience enhanced data processing capabilities while benefiting from low power consumption and a compact design. Trust in STMicroelectronics’ reputation for quality and innovation to elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it a reliable choice for various applications.

Surface Mount: YES

With surface mount technology, this IC offers a compact design, allowing for a smaller footprint on PCBs and easier manufacturing.

Package Shape: RECTANGULAR

Rectangular packaging allows for better space management on circuit boards, facilitating optimal layout and routing.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances speed and efficiency, enabling faster data processing and improved performance in high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combining Flash and PSRAM enables versatile memory use, providing both non-volatile storage and fast data access, perfect for diverse applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal voltage of 1.8V helps to reduce power consumption, making the IC well-suited for energy-efficient designs.

Power Supplies (V): 1.8

A consistent power supply voltage of 1.8V enhances compatibility across a range of devices and reduces design complexity.

No. of Terminals: 88

A higher number of terminals allows for more connections, supporting complex designs and functionality in advanced applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile fine pitch grid array design is ideal for high-density applications, ensuring effective use of board space.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can function reliably in demanding environments.

Organization: 16MX16

The organization of 16M x 16 ensures substantial storage capacity, supporting a wide range of memory-intensive applications.

Minimum Operating Temperature: -25 °C

Operating at temperatures as low as -25 °C allows this IC to be used in even the most extreme conditions, enhancing its versatility.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish provides excellent solderability and reliability, extending the life of the component.

Terminal Position: BOTTOM

Bottom terminal positioning aids in efficient cooling and can optimize PCB layout, improving performance.

Maximum Seated Height: 1.4 mm

A maximum seated height of 1.4mm contributes to a low-profile design, enabling space savings in compact devices.

Width: 8 mm

At 8mm wide, this IC maintains a size conducive to fitting into tight spaces on PCB designs.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum voltage requirement of 1.7V further enhances design flexibility, accommodating various power supply options.

Length: 10 mm

The 10mm length provides an optimal size for integration into various electronic devices, maintaining a compact form factor.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-speed operation, making the IC suitable for modern digital applications.

Terminal Form: BALL

Ball terminal design improves soldering ease and enhances connectivity reliability compared to traditional lead forms.

Maximum Supply Current: 52 mA

A maximum supply current of 52mA allows for efficient performance in applications where power management is critical.

No. of Words: 16777216 words

With over 16 million words, the memory capacity supports complex data handling requirements in advanced applications.

Memory Width: 16

A memory width of 16 bits facilitates efficient data processing, enhancing the performance of data-intensive applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8mm allows for a fine pitch grid, facilitating high-density designs and compact layouts.

No. of Words Code: 16M

The '16M' words code indicates substantial memory capacity, ideal for applications requiring significant data storage.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V provides flexibility in power supply variations, improving compatibility with different systems.

Memory Density: 268435456 bit

High memory density of 268,435,456 bits enables comprehensive data storage capabilities for modern applications.

Memory IC Type: MEMORY CIRCUIT

Designed as a memory circuit, this IC is engineered specifically for high-performance memory applications, ensuring optimal functionality.

Maximum Standby Current: 0.00011 Amp

A very low maximum standby current minimizes power draw during inactive periods, highlighting energy efficiency in design.

Technical Specifications

Other Function Memory ICs M36LLR8860T1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860T1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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