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M36L0R7050B0ZAQF

STMicroelectronics

M36L0R7050B0ZAQF by STMicroelectronics

M36L0R7050B0ZAQF by STMicroelectronics is a mixed memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode and has a max temp of 85 °C, ideal for compact applications in consumer electronics. Its thin profile and surface mount design enhance space efficiency.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 1,332 parts In-Stock

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Digiode

USA . 779 parts In-Stock

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779

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Vyrian

USA . 419 parts In-Stock

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419

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 451 parts In-Stock

1+ parts

$2.543

100+ parts

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$2.289

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451

$2.543

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$2.289

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MKK Technologies

India . 1,160 parts In-Stock

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$4.782

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$4.782

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DigiPath Technology Company

USA . 1,160 parts In-Stock

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$4.782

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$4.782

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Corphita

USA . 4,381 parts In-Stock

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Parana Technologies

USA . 1,101 parts In-Stock

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$3.040

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$3.040

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Overview

Unlock the potential of your projects with the M36L0R7050B0ZAQF from STMicroelectronics, a trusted leader in high-quality semiconductor solutions. This versatile memory IC combines flash and PSRAM, perfect for applications that demand reliability and performance. With its compact design and low power consumption, it seamlessly fits into a variety of devices. Experience enhanced efficiency and peace of mind knowing you’re backed by STMicroelectronics’ commitment to innovation and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body provides a robust and lightweight design, enhancing durability and environmental resistance.

Surface Mount: YES

Being surface mount compatible facilitates easier integration into compact circuit designs and contributes to reduced overall PCB size.

Package Shape: RECTANGULAR

A rectangular package shape promotes efficient use of PCB real estate, allowing for optimal layouts and better thermal management.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing and control in various applications, making it versatile for different configurations.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM technologies offers high-speed data processing and storage capabilities for complex applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal voltage of 1.8V helps conserve energy, making this IC suitable for battery-powered devices.

Power Supplies (V): 1.8

This low power supply requirement enhances the energy efficiency of the overall system, leading to longer battery life in portable devices.

No. of Terminals: 88

With 88 terminals, this IC provides ample connections for data and control signals, supporting complex application requirements.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array style with a thin profile and fine pitch allows for high-density mounting, making it ideal for modern compact devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC is suitable for a variety of environments, ensuring reliability under thermal stress.

Organization: 8MX16

The 8MX16 organization provides a balanced ratio of memory size and access speed, optimizing performance for data-intensive applications.

Minimum Operating Temperature: -25 °C

A low minimum operating temperature ensures functionality in colder climates, making this IC suitable for outdoor and industrial applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish enhances solderability and promotes a reliable electrical connection, ensuring stable performance.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout and assembly, improving the efficiency of device manufacturing.

Maximum Seated Height: 1.2 mm

The low seated height contributes to the slim profile of devices, facilitating design in compact applications.

Width: 8 mm

At 8 mm wide, the IC strikes a balance between performance and space-efficiency, fitting well into various designs.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V allows for flexible power management in low-power applications, enhancing battery life.

Length: 10 mm

The 10 mm length is ideal for integrating into a variety of space-constrained designs without compromising functionality.

Technology: CMOS

CMOS technology is known for its low power consumption and high noise immunity, making it a favorable choice for reliability.

Terminal Form: BALL

Ball terminal form allows for efficient soldering and provides a reliable mechanical connection, ensuring long-term durability.

Maximum Supply Current: 47 mA

With a maximum supply current of 47 mA, this IC can deliver high performance while managing power consumption effectively.

No. of Words: 8388608 words

An extensive memory capacity of 8388608 words makes it suitable for applications requiring substantial data storage and processing.

Memory Width: 16

A 16-bit memory width facilitates efficient data handling and processing speeds, making it ideal for various high-performance applications.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for more terminals in a given area, supporting high-density designs.

No. of Words Code: 8M

The 8M word code indicates a high density of information that this memory IC can store, offering flexibility for diverse applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V ensures compatibility with a broad range of power supply systems while maintaining efficiency.

Memory Density: 134217728 bit

With a memory density of 134217728 bits, this IC is capable of handling large data sets, making it suitable for advanced computing needs.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, this IC provides essential storage capabilities crucial for various electronic applications and devices.

Maximum Standby Current: 0.00007 Amp

An extremely low maximum standby current significantly enhances energy efficiency, which is critical for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36L0R7050B0ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050B0ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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