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M36L0R7050L1ZAMF

STMicroelectronics

M36L0R7050L1ZAMF by STMicroelectronics

M36L0R7050L1ZAMF from STMicroelectronics features a mixed FLASH+PSRAM memory type with a density of 2 Gb and operates asynchronously. It supports a supply voltage range of 1.7-1.95 V and functions effectively in temperatures from -25 °C to 85°C. Ideal for compact applications, it comes in an 88-terminal thin profile grid array package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,048 parts In-Stock

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3,048

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Anansix

USA . 557 parts In-Stock

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557

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Vyrian

USA . 102 parts In-Stock

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102

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,318 parts In-Stock

1+ parts

$3.732

100+ parts

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$3.358

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MKK Technologies

India . 981 parts In-Stock

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$7.017

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981

$7.017

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DigiPath Technology Company

USA . 981 parts In-Stock

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$7.017

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981

$7.017

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Parana Technologies

USA . 2,068 parts In-Stock

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$4.462

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$4.462

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Corphita

USA . 132 parts In-Stock

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Overview

Unlock unparalleled performance and efficiency with the M36L0R7050L1ZAMF memory solution from STMicroelectronics. Renowned for their quality and innovation, STMicroelectronics delivers a cutting-edge FLASH+PSRAM hybrid memory that excels in demanding applications like IoT devices, automotive systems, and wearables. Experience swift data processing, low power consumption, and exceptional reliability that empowers your designs to thrive in any environment. Choose STMicroelectronics for unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides excellent reliability and protection against environmental factors, ensuring longevity of the memory IC.

Surface Mount: YES

Surface mounting allows for a more compact design and easier integration into modern circuit boards, enhancing the product's versatility.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space efficiency, making it suitable for a variety of applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operation enables faster access times, making it ideal for applications requiring quick data retrieval.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides both high-density long-term storage and fast temporary data access, enhancing performance in data-intensive applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal voltage reduces power consumption, making it energy-efficient for battery-powered devices.

Power Supplies (V): 1.8

Powered by a 1.8V supply ensures compatibility with modern low-voltage systems and helps save energy.

No. of Terminals: 88

A greater number of terminals allows for more connections and functionality, enabling more complex circuit designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This packaging style allows for higher pin densities and more compact layouts, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

A higher maximum operating temperature ensures reliability in warmer environments, making it suitable for a wider range of applications.

Organization: 64MX32

This organization structure enables efficient data storage and retrieval, enhancing overall performance.

Minimum Operating Temperature: -25 °C

The wide temperature range ensures stability and performance in extreme cold conditions, making it versatile for various environments.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates better heat dissipation and efficient space usage on circuit boards.

Maximum Seated Height: 1.2 mm

A low seated height enables designs with tighter profiles, which is essential for compact electronic devices.

Width: 8 mm

Narrow width contributes to compact design solutions, perfect for modern electronic applications.

Minimum Supply Voltage (Vsup): 1.7 V

The ability to operate at a lower supply voltage contributes to both energy efficiency and compatibility with various systems.

Length: 10.05 mm

Shorter lengths enhance design flexibility, allowing for application in various compact electronic devices.

Temperature Grade: COMMERCIAL EXTENDED

Extended temperature grading ensures operation under various environmental conditions, increasing the product's reliability.

Technology: CMOS

CMOS technology allows for low power consumption and high noise immunity, making the product suitable for reliable applications.

Terminal Form: BALL

Ball terminal form enhances solderability and provides robust connections, improving durability of the memory IC.

No. of Words: 67108864 words

With a high number of words, this memory IC can handle substantial data storage needs, suitable for data-intensive applications.

Memory Width: 32

A memory width of 32 bits allows for efficient data processing and enhances the performance of applications that require wide data paths.

Terminal Pitch: 0.8 mm

Smaller terminal pitch allows for more compact layouts and a higher density of connections in circuit designs.

No. of Words Code: 64M

64 million words provide ample memory capacity for a variety of applications, ensuring flexibility in usage.

Maximum Supply Voltage (Vsup): 1.95 V

Support for slightly higher supply voltages offers design flexibility while maintaining efficiency.

Memory Density: 2147483648 bit

High memory density allows for substantial data storage within a minimal footprint, ideal for modern electronics.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit, this product is specifically optimized for both speed and reliability in data storage applications.

Technical Specifications

Other Function Memory ICs M36L0R7050L1ZAMF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PBGA-B88

Length:

10.05 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

32

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

64MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050L1ZAMF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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