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M36L0R7050T0ZAQE

STMicroelectronics

M36L0R7050T0ZAQE by STMicroelectronics

M36L0R7050T0ZAQE by STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact grid array package, ideal for low-power applications. With an operating temp range of -25 °C to 85 °C, it ensures reliability in diverse environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,704 parts In-Stock

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Digiode

USA . 2,191 parts In-Stock

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2,191

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Anansix

USA . 551 parts In-Stock

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551

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 587 parts In-Stock

1+ parts

$4.491

100+ parts

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$4.042

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587

$4.491

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$4.042

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MKK Technologies

India . 916 parts In-Stock

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$8.446

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916

$8.446

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DigiPath Technology Company

USA . 916 parts In-Stock

1+ parts

$8.446

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916

$8.446

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Corphita

USA . 2,880 parts In-Stock

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Parana Technologies

USA . 1,774 parts In-Stock

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$5.370

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$5.370

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Overview

Unlock the power of innovation with the M36L0R7050T0ZAQE from STMicroelectronics, a leader in cutting-edge memory solutions. Engineered for efficiency and reliability, this high-performance IC features a unique blend of FLASH and PSRAM technology, catering to diverse applications ranging from IoT devices to advanced computing systems. With its compact design and robust operating range, this memory IC ensures seamless data processing and enhanced endurance, providing exceptional value for your projects. Experience the difference of superior quality and performance with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material offers robustness and thermal stability, ensuring reliable performance in various environments.

Surface Mount: YES

The surface mount capability allows for efficient manufacturing processes, enabling compact design and saving board space.

Package Shape: RECTANGULAR

The rectangular shape is optimized for efficient space usage, making it suitable for high-density applications.

Operating Mode: ASYNCHRONOUS

This mode enhances the speed and performance of memory operations, providing flexibility for various applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM offers both high-speed data access and efficient storage, making it versatile for different use cases.

Nominal Supply Voltage / Vsup (V): 1.8

The low operating voltage ensures energy efficiency, contributing to overall power savings in battery-operated devices.

Power Supplies (V): 1.8

This consistent voltage requirement simplifies design and integration into low-power systems.

No. of Terminals: 88

A higher number of terminals provides more connectivity options, enabling greater functionality and integration capabilities.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design optimize performance and facilitate densely packed circuit designs.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures ensures reliability in demanding applications, extending the product's operational life.

Organization: 8MX16

This memory organization allows for efficient data access and management, catering to various application requirements.

Minimum Operating Temperature: -25 °C

The wide temperature range ensures reliable operation in harsh environmental conditions, making it suitable for outdoor applications.

Terminal Finish: TIN SILVER COPPER

The superior terminal finish improves conductivity and solderability, enhancing the overall reliability of connections.

Terminal Position: BOTTOM

Bottom-positioned terminals facilitate easy mounting and contribute to a more compact design layout.

Maximum Seated Height: 1.2 mm

A low seated height allows for a compact assembly while maintaining performance, ideal for space-constrained applications.

Width: 8 mm

This width strikes a balance between compact design and ease of handling during assembly.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage ensures compatibility with a broader range of systems, enhancing design flexibility.

Length: 10 mm

The size allows for efficient integration in small form factor devices without compromising performance.

Technology: CMOS

Using CMOS technology maximizes energy efficiency and minimizes heat generation, suitable for high-performance applications.

Terminal Form: BALL

Ball terminal form promotes better thermal and electrical conductivity, crucial for high-speed operation.

Maximum Supply Current: 47 mA

This current rating ensures reliable performance while maintaining a balance between power consumption and output capability.

No. of Words: 8388608 words

The large number of words provides ample storage space, accommodating complex data requirements in various applications.

Memory Width: 16

A wider memory width allows for faster data processing, enhancing the overall speed of operations.

Terminal Pitch: 0.8 mm

The narrow pitch facilitates higher density placements on PCBs, catering to compact designs.

No. of Words Code: 8M

Having 8M words makes the product suitable for applications requiring substantial data storage without sacrificing performance.

Maximum Supply Voltage (Vsup): 1.95 V

A relatively low maximum supply voltage ensures that the product can be used in a wide range of modern electronic devices.

Memory Density: 134217728 bit

High memory density allows for substantial data storage within a compact footprint, suitable for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for efficiency and performance, ensuring reliable data storage and retrieval.

Maximum Standby Current: 0.00007 Amp

The extremely low standby current signifies minimal energy usage during idle states, making it ideal for battery-powered devices.

Technical Specifications

Other Function Memory ICs M36L0R7050T0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050T0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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