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M38510/31901BEX

Texas Instruments

M38510/31901BEX by Texas Instruments

M38510/31901BEX by Texas Instruments is a MILITARY-grade MEMORY CIRCUIT with 16-bit memory density. It operates ASYNCHRONOUSLY at temperatures ranging from -55 to 125 °C, ideal for applications requiring reliable performance in harsh environments. The IC features a 4x4 organization and comes in a CERAMIC, METAL-SEALED COFIRED package with 16 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,688 parts In-Stock

1+ parts

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5,688

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Digiode

USA . 4,764 parts In-Stock

1+ parts

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4,764

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Anansix

USA . 1,806 parts In-Stock

1+ parts

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1,806

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Quantum Digital Technology

USA . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,470 parts In-Stock

1+ parts

$2.132

100+ parts

-

1k+ parts

$2.643

10k+ parts

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1,470

$2.132

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$2.643

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DigiPath Technology Company

USA . 2,329 parts In-Stock

1+ parts

$2.347

100+ parts

-

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2,329

$2.347

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ChromeModa Solutions

Germany . 1,154 parts In-Stock

1+ parts

$2.395

100+ parts

$1.964

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1,154

$2.395

$1.964

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IDEA Electronic Components Group

UK . 1,081 parts In-Stock

1+ parts

$2.395

100+ parts

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1k+ parts

$2.156

10k+ parts

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1,081

$2.395

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$2.156

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One Stop Electronics

USA . 899 parts In-Stock

1+ parts

$6.000

100+ parts

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899

$6.000

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AZTECH Wire

Italy . 618 parts In-Stock

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$10.217

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618

$10.217

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Corphita

USA . 239 parts In-Stock

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239

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Overview

Experience superior quality and reliability with the M38510/31901BEX by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in all their products. This memory circuit offers unmatched value and benefits to customers, making it ideal for various applications. Trust in Texas Instruments to provide you with cutting-edge technology that meets your needs. Elevate your projects with the M38510/31901BEX and experience excellence like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal stability and reliability, making the product suitable for harsh operating environments.

Screening Level: MIL-PRF-38535 Class B

The product meets stringent military specifications, ensuring high quality and reliability for critical applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and efficient memory access, enhancing the overall performance of the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V, this product is compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand extended use in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Other Function Memory ICs M38510/31901BEX attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-CDIP-T16

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4X4

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class B

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

M38510/31901BEX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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