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M36W216BI85ZA1T

STMicroelectronics

M36W216BI85ZA1T by STMicroelectronics

M36W216BI85ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at 3V and supports a max access time of 85ns. Ideal for commercial applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,695 parts In-Stock

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2,695

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Anansix

USA . 1,534 parts In-Stock

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1,534

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Vyrian

USA . 866 parts In-Stock

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866

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 733 parts In-Stock

1+ parts

$4.882

100+ parts

-

1k+ parts

$4.394

10k+ parts

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733

$4.882

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$4.394

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MKK Technologies

India . 446 parts In-Stock

1+ parts

$9.181

100+ parts

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446

$9.181

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DigiPath Technology Company

USA . 446 parts In-Stock

1+ parts

$9.181

100+ parts

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446

$9.181

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Corphita

USA . 4,481 parts In-Stock

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4,481

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Parana Technologies

USA . 273 parts In-Stock

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$5.838

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273

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$5.838

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Overview

Unlock the potential of your designs with the M36W216BI85ZA1T from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile memory IC combines Flash and SRAM technologies for exceptional performance in diverse applications, ensuring reliability and efficiency. With its low-profile design and asynchronous operation, this product delivers seamless integration and power savings, empowering you to create cutting-edge devices that stand out in today’s competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers good protection against environmental factors while remaining lightweight and cost-effective.

Surface Mount: YES

Surface mount technology allows for smaller board designs and improved performance through shorter electrical paths.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs and allows for efficient layout in various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in system design and simplifies timing requirements in many applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers both non-volatile storage and fast access, making it versatile for various applications.

Nominal Supply Voltage / Vsup (V): 3

A nominal operating voltage of 3V is commonly used, ensuring compatibility with a wide range of devices.

Power Supplies (V): 3

The unified power supply requirement simplifies design and integration into existing systems.

No. of Terminals: 66

A higher number of terminals enhances connectivity options, enabling more complex functions within a compact design.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This package style ensures reduced height and ease of assembly while maintaining high-density connections.

Maximum Operating Temperature: 70 °C

Designed to operate at up to 70 °C, this IC can function reliably in many commercial environments.

Organization: 1MX16

The specific organization enables efficient data handling, optimizing performance in various applications.

Minimum Operating Temperature: 0 °C

Supports a wide operating temperature range, making it suitable for many industrial applications.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

The quality terminal finish enhances solderability and improves overall reliability and performance.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better thermal management and space efficiency on PCB layouts.

Maximum Seated Height: 1.4 mm

The low profile of 1.4 mm is advantageous for compact designs, allowing for more space for other components.

Width: 8 mm

The compact width is suitable for high-density applications without compromising performance.

Minimum Supply Voltage (Vsup): 2.7 V

Flexibility in supply voltage allows this IC to be integrated into varied systems with different voltage requirements.

Length: 12 mm

The length of 12 mm ensures compatibility with standard PCB footprints while maintaining functionality.

Temperature Grade: COMMERCIAL

Rated for commercial temperature conditions, making it ideal for a broad range of consumer electronics.

Technology: CMOS

CMOS technology provides low power consumption and high speed, which is beneficial for battery-operated devices.

Terminal Form: BALL

Ball terminals facilitate reliable soldering processes and improve electrical connectivity.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA indicates efficient power usage, enhancing overall energy efficiency.

No. of Words: 1048576 words

With 1M words, it offers ample memory for applications requiring substantial data storage.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and transfer rates.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch aids in fine pitch designs, supporting higher density layouts.

No. of Words Code: 1M

The 1M words code enhances the versatility of applications this memory IC can support.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V ensures compatibility with a wide range of digital circuits.

Memory Density: 16777216 bit

With a memory density of 16M bits, it provides vast storage capacity for complex applications.

Memory IC Type: MEMORY CIRCUIT

Categorized as a memory circuit, it is built to cater to diverse storage needs effectively.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current optimizes power efficiency, making it perfect for low-power applications.

Maximum Access Time: 85 ns

A maximum access time of 85 ns ensures fast data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W216BI85ZA1T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI85ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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