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M36LLR8760T1ZAQF

STMicroelectronics

M36LLR8760T1ZAQF by STMicroelectronics

M36LLR8760T1ZAQF by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,844 parts In-Stock

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Anansix

USA . 2,845 parts In-Stock

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2,845

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Digiode

USA . 909 parts In-Stock

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909

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IDEA Electronic Components Group

UK . 996 parts In-Stock

1+ parts

$2.834

100+ parts

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$2.550

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996

$2.834

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$2.550

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MKK Technologies

India . 1,658 parts In-Stock

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$5.328

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$5.328

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DigiPath Technology Company

USA . 1,658 parts In-Stock

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$5.328

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1,658

$5.328

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Corphita

USA . 3,063 parts In-Stock

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3,063

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Parana Technologies

USA . 977 parts In-Stock

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$3.388

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$3.388

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Overview

Unlock your project's potential with the M36LLR8760T1ZAQF from STMicroelectronics, a leader in innovative memory solutions. This advanced memory IC seamlessly combines FLASH and PSRAM technologies, ensuring high-speed performance while maintaining energy efficiency. Ideal for versatile applications, from IoT devices to consumer electronics, it delivers exceptional reliability backed by ST's renowned quality standards. Elevate your designs and experience unmatched value with this cutting-edge component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easier integration into modern circuit designs, enhancing overall manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, facilitating compact circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation permits faster data access and reduces latency, improving the overall system performance.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides flexibility in memory usage, allowing for efficient data storage and processing.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8 V contributes to lower power consumption, enhancing energy efficiency in portable devices.

Power Supplies: 1.8 V

The specific power supply requirement of 1.8 V is standard for many low-power applications, making it easy to integrate into existing designs.

No. of Terminals: 88

With 88 terminals, the product offers ample connectivity options for complex applications, supporting various interfacing needs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array design with a low profile and fine pitch ensures optimal performance in high-density applications.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C enables reliable performance in moderately high thermal environments.

Organization: 16MX16

The memory organization of 16MX16 offers a balanced structure for efficient data retrieval and storage operations.

Minimum Operating Temperature: -25 °C

A minimum operating temperature of -25 °C makes this product suitable for outdoor and harsh environment applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances the solderability and reliability of connections in various operating conditions.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient routing and layout in circuit boards, leading to compact designs.

Maximum Seated Height: 1.4 mm

A low maximum seated height of 1.4 mm aids in achieving slim profile assemblies, ideal for space-constrained applications.

Width: 8 mm

The 8 mm width allows for integration into narrow designs while still providing robust performance.

Minimum Supply Voltage (Vsup): 1.7 V

With a minimum supply voltage of 1.7 V, the product remains compatible with many low-power applications, enhancing its utility.

Length: 10 mm

The compact 10 mm length supports space optimization in various electronic designs, particularly in portable devices.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making this IC suitable for battery-powered systems.

Terminal Form: BALL

The ball terminal form facilitates better thermal dissipation and mechanical stability in compact package designs.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates efficient energy usage, critical for portable electronic applications.

No. of Words: 16777216 words

With 16,777,216 words of storage, the product offers significant memory capacity for diverse applications.

Memory Width: 16

A memory width of 16 bits allows for enhanced data throughput, optimizing performance in data-intensive applications.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch enhances the product's compatibility with modern circuit board designs, allowing for tighter layouts.

No. of Words Code: 16M

The 16M words code reflects the extensive data storage capabilities, making it ideal for applications requiring significant memory.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95 V maintains a balance between performance and power efficiency, suitable for various applications.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, the product meets the demands of data-heavy applications effectively.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is tailored for efficient data storage and access, simplifying design requirements.

Maximum Standby Current: 0.00011 Amp

A very low maximum standby current of 0.00011 Amp enhances energy efficiency, making the product ideal for battery-powered and low-power devices.

Technical Specifications

Other Function Memory ICs M36LLR8760T1ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760T1ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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