Loading...

M36L0R7050T0ZAQ

STMicroelectronics

M36L0R7050T0ZAQ by STMicroelectronics

M36L0R7050T0ZAQ by STMicroelectronics is a mixed memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode with a max temp of 85 °C and comes in a thin profile grid array package. Ideal for low-power applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,076 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,076

-

-

-

-

Anansix

USA . 2,539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,539

-

-

-

-

Vyrian

USA . 1,915 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,915

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,365 parts In-Stock

1+ parts

$5.466

100+ parts

-

1k+ parts

$4.919

10k+ parts

-

2,365

$5.466

-

$4.919

-

MKK Technologies

India . 1,380 parts In-Stock

1+ parts

$10.278

100+ parts

-

1k+ parts

-

10k+ parts

-

1,380

$10.278

-

-

-

DigiPath Technology Company

USA . 1,380 parts In-Stock

1+ parts

$10.278

100+ parts

-

1k+ parts

-

10k+ parts

-

1,380

$10.278

-

-

-

Corphita

USA . 2,924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,924

-

-

-

-

Parana Technologies

USA . 1,187 parts In-Stock

1+ parts

-

100+ parts

$6.535

1k+ parts

-

10k+ parts

-

1,187

-

$6.535

-

-

Overview

Discover the M36L0R7050T0ZAQ from STMicroelectronics, a cutting-edge memory solution that seamlessly blends performance and reliability. With its advanced FLASH+PSRAM technology, this compact IC excels in various applications, from IoT devices to consumer electronics. Designed for efficiency, it operates within a broad temperature range while consuming minimal power, ensuring long-lasting functionality. Elevate your designs with a trusted name in innovation—STMicroelectronics delivers uncompromising quality and value you can rely on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for more compact circuit designs and improved efficiency in manufacturing, making it easier to integrate into modern devices.

Package Shape: RECTANGULAR

The rectangular shape enables efficient space utilization on PCB layouts, allowing for better performance in space-constrained designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing and ease of integration with various system architectures, ideal for responsive applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides both persistent storage and high-speed data access, enhancing performance in applications that require quick data retrieval.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal voltage of 1.8V contributes to lower power consumption, making it energy-efficient and environmentally friendly.

Power Supplies (V): 1.8

Standardized power supply voltage simplifies design and reduces component count, ensuring ease of integration in various systems.

No. of Terminals: 88

With 88 terminals, this IC offers extensive connectivity options for complex applications and multipurpose use.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array design with a thin profile and fine pitch enables high-density mounting and optimal performance in compact electronics.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliability and performance in demanding environments, making it suitable for industrial applications.

Organization: 8MX16

This memory organization allows for efficient data handling and optimal performance in various memory-intensive applications.

Minimum Operating Temperature: -25 °C

The ability to operate in extremely low temperatures makes this IC versatile and reliable for use in harsh environments.

Terminal Finish: TIN LEAD

The tin-lead finish ensures excellent solderability and durability of connections, promoting reliable performance in various circuits.

Terminal Position: BOTTOM

Bottom-positioned terminals facilitate effective heat dissipation and allow for lower-profile designs in electronic assemblies.

Maximum Seated Height: 1.2 mm

A compact seated height supports low-profile designs, essential for modern mobile and portable devices.

Width: 8 mm

A width of 8 mm allows for efficient space management on PCB layouts, enhancing circuit design options.

Minimum Supply Voltage (Vsup): 1.7 V

The flexibility of operating at a minimum voltage of 1.7V enhances compatibility with a variety of electronic systems.

Length: 10 mm

A length of 10 mm provides a balanced size that is ideal for compact designs without sacrificing performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it suitable for battery-operated devices.

Terminal Form: BALL

Ball terminals provide improved mounting stability and reliability in various electronic applications, reducing the risk of connection failures.

Maximum Supply Current: 47 mA

The maximum supply current of 47 mA denotes a moderate power requirement, allowing for efficient design while meeting performance needs.

No. of Words: 8388608 words

With the capacity to store over 8 million words, this memory IC is well-suited for data-intensive applications demanding large storage.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, making it ideal for performance-sensitive applications.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch supports high-density PCB designs, enabling effective use of space in modern electronics.

No. of Words Code: 8M

The 8M word code indicates substantial storage capabilities, perfect for applications requiring extensive data retention.

Maximum Supply Voltage (Vsup): 1.95 V

Operating at a maximum voltage of 1.95V broadens compatibility across various systems while maintaining efficient power usage.

Memory Density: 134217728 bit

The substantial memory density of 134M bits enables storage of large data sets, making it optimal for high-performance applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC is specifically designed for efficient data storage and retrieval, making it essential for modern electronics.

Maximum Standby Current: 0.00007 Amp

The ultra-low maximum standby current signifies high efficiency, extending battery life in portable devices and reducing overall energy consumption.

Technical Specifications

Other Function Memory ICs M36L0R7050T0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050T0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20