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M36L0R7050B0ZAQ

STMicroelectronics

M36L0R7050B0ZAQ by STMicroelectronics

M36L0R7050B0ZAQ from STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact 88-terminal grid array package. Ideal for applications requiring low power and high-density storage, it operates b/w -25 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,447 parts In-Stock

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Vyrian

USA . 525 parts In-Stock

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525

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Anansix

USA . 83 parts In-Stock

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83

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IDEA Electronic Components Group

UK . 2,210 parts In-Stock

1+ parts

$2.881

100+ parts

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$2.593

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2,210

$2.881

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$2.593

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MKK Technologies

India . 747 parts In-Stock

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$5.418

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747

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DigiPath Technology Company

USA . 747 parts In-Stock

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$5.418

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747

$5.418

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Parana Technologies

USA . 1,239 parts In-Stock

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$3.445

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$3.445

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Corphita

USA . 1,222 parts In-Stock

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Overview

Unlock the power of innovation with the M36L0R7050B0ZAQ from STMicroelectronics—a leader in memory solutions. This advanced memory IC seamlessly combines FLASH and PSRAM technologies, ensuring reliability and efficiency for diverse applications, from IoT devices to consumer electronics. With its compact design and robust performance across varying temperatures, this product delivers exceptional value, enabling customers to enhance their designs with confidence and ease. Embrace quality and cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the IC reliable for long-term applications.

Surface Mount: YES

Surface mount technology allows for compact designs, facilitating efficient use of space on the PCB.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout on PCBs, allowing for efficient placement and routing of connections.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing, simplifying design for various application requirements.

Mixed Memory Type: FLASH+PSRAM

Combining flash and PSRAM offers enhanced performance and memory capabilities, suitable for a wide range of applications.

Nominal Supply Voltage / Vsup: 1.8V

Operating at a nominal voltage of 1.8V ensures lower power consumption, making it energy-efficient for portable devices.

Power Supplies (V): 1.8

Single power supply simplifies design and reduces the number of components required in the circuit.

No. of Terminals: 88

A higher number of terminals allows for more connections, enabling complex designs and features in applications.

Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile and fine pitch enhance integration into compact electronic devices, maintaining high performance and reliability.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures makes this IC suitable for a range of environments, including industrial applications.

Organization: 8MX16

The 8M x 16 organization provides significant memory capacity, useful for data-intensive applications.

Minimum Operating Temperature: -25 °C

Withstanding low temperatures ensures reliable performance in harsh conditions, ideal for outdoor and extreme environment applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures compatibility with various soldering processes and enhances reliability in connections.

Terminal Position: BOTTOM

Bottom terminations facilitate better thermal performance and placement on PCBs, contributing to improved overall functionality.

Maximum Seated Height: 1.2 mm

Low profile design aids in height-constrained applications, providing flexibility in device enclosure designs.

Width: 8 mm

A compact width allows for dense circuit layouts, making this IC suitable for space-constrained electronic devices.

Minimum Supply Voltage (Vsup): 1.7V

Lower minimum supply voltage increases compatibility with various power management systems, promoting versatility.

Length: 10 mm

A manageable length aids in PCB layout design while delivering substantial memory in a compact form factor.

Technology: CMOS

CMOS technology enables lower power consumption and higher speed operation, making it suitable for modern high-performance applications.

Terminal Form: BALL

Ball terminal form enhances the electrical connection and thermal performance, ensuring stable operation in various environments.

Maximum Supply Current: 47 mA

The maximum supply current of 47 mA indicates efficient power usage, balancing performance with energy consumption.

No. of Words: 8388608 words

The substantial number of words available allows for significant data storage capabilities, beneficial for various applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, enhancing the IC's overall performance in data-intensive tasks.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch is standard for modern designs, enhancing compatibility with existing PCB layouts.

No. of Words Code: 8M

An 8M words code signifies large storage capacity, making this IC suitable for applications such as multimedia and data logging.

Maximum Supply Voltage (Vsup): 1.95V

The maximum supply voltage of 1.95V supports a range of performance scenarios while maintaining low power profiles.

Memory Density: 134217728 bit

The high memory density allows for extensive data storage, crucial for applications demanding large memory footprints.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, it optimized performance for storage, ensuring reliability in critical applications.

Maximum Standby Current: 0.00007 Amp

The extremely low maximum standby current indicates excellent power-saving capabilities, making it ideal for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36L0R7050B0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 2M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7050B0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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