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M36L0R7040B0ZAQE

STMicroelectronics

M36L0R7040B0ZAQE by STMicroelectronics

M36L0R7040B0ZAQE from STMicroelectronics is a mixed memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous mode with a max temp of 85 °C and comes in a thin profile grid array package. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,608 parts In-Stock

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3,608

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Anansix

USA . 949 parts In-Stock

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949

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Vyrian

USA . 369 parts In-Stock

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369

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 942 parts In-Stock

1+ parts

$4.389

100+ parts

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1k+ parts

$3.950

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942

$4.389

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$3.950

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MKK Technologies

India . 2,195 parts In-Stock

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$8.254

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2,195

$8.254

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DigiPath Technology Company

USA . 2,195 parts In-Stock

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$8.254

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2,195

$8.254

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Corphita

USA . 4,253 parts In-Stock

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4,253

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Parana Technologies

USA . 436 parts In-Stock

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$5.248

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436

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$5.248

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Overview

Unlock unparalleled performance with the M36L0R7040B0ZAQE by STMicroelectronics—your go-to solution for advanced memory applications. Crafted with precision and backed by a trusted leader in semiconductor technology, this dual FLASH+PSRAM device ensures reliability in every project. Ideal for consumer electronics, automotive systems, and IoT devices, it offers exceptional efficiency and durability, empowering you to innovate without limits. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection for the internal components, making this memory IC suitable for a variety of environmental conditions.

Surface Mount: YES

Surface mount capability allows for efficient use of circuit board space and simplifies the manufacturing process, ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space and can fit in standard layouts, improving compatibility with existing designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times, which is crucial for applications requiring quick data retrieval.

Mixed Memory Type: FLASH+PSRAM

This combination offers flexibility in data storage and retrieval, being suitable for both temporary and long-term data management.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal voltage of 1.8V makes the IC power-efficient, reducing overall energy consumption in the device.

Power Supplies (V): 1.8

Having a single power supply requirement of 1.8V increases design simplicity and reduces the number of components needed, which can lower costs.

No. of Terminals: 88

With 88 terminals, this memory IC offers more connections, allowing for complex interfacing options while maintaining a compact footprint.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design allows for better mounting on compact circuit boards, facilitating space-efficient electronics.

Maximum Operating Temperature: 85 °C

A maximum temperature rating of 85 °C ensures reliable operation in various commercial applications without the risk of overheating.

Organization: 8MX16

The 8MX16 organization enables efficient data storage and retrieval in a structured manner, enhancing performance in data-intensive applications.

Minimum Operating Temperature: -25 °C

Operating at temperatures as low as -25 °C makes this memory IC reliable for use in colder environments and outdoor applications.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish enhances solderability and provides better corrosion resistance, ensuring longevity and reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for mounting in tightly packed circuits, further maximizing design options.

Maximum Seated Height: 1.2 mm

The low maximum seated height (1.2 mm) allows for thin profiles in electronic devices, appealing for portable applications.

Width: 8 mm

At a width of 8 mm, this memory IC maintains a compact size, aiding in space-constrained applications.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage of 1.7V allows for flexibility in design, catering to various power supply configurations and battery-operated devices.

Length: 10 mm

With a length of 10 mm, this memory IC is designed to fit easily in small electronic devices, promoting versatility in applications.

Technology: CMOS

CMOS technology ensures lower power consumption and higher performance, making it suitable for modern applications demanding efficiency.

Terminal Form: BALL

Ball terminal forms enhance the soldering process, improving reliability and mechanical strength of the connections.

Maximum Supply Current: 47 mA

A maximum supply current of 47 mA provides a balance between performance and energy efficiency for various applications.

No. of Words: 8388608 words

An impressive capacity of 8388608 words enables substantial data storage, which is ideal for complex applications like multimedia processing.

Memory Width: 16

A 16-bit memory width allows for efficient data processing and retrieval, catering to modern processing needs.

Terminal Pitch: 0.8 mm

With a terminal pitch of 0.8 mm, this memory IC can be utilized in high-density applications, maximizing space efficiency.

No. of Words Code: 8M

The memory IC's specification of 8M words indicates significant storage capacity, suitable for applications with large data requirements.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V ensures compatibility with a variety of power systems while providing a margin for stable operation.

Memory Density: 134217728 bit

A high memory density of 134217728 bits facilitates significant data storage, making this IC a strong choice for memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this product is specifically designed for data storage tasks, ensuring optimal performance in its intended functions.

Maximum Standby Current: 0.00007 Amp

With a maximum standby current of only 0.00007 A, this IC offers exceptional energy efficiency, making it suitable for battery-operated devices.

Technical Specifications

Other Function Memory ICs M36L0R7040B0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7040B0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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