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M36L0R7040T0ZAQE

STMicroelectronics

M36L0R7040T0ZAQE by STMicroelectronics

M36L0R7040T0ZAQE by STMicroelectronics is a versatile memory IC featuring 8M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact grid array package, ideal for low-power applications. With an operating temp range of -25 °C to 85 °C, it suits various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,727 parts In-Stock

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1,727

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Digiode

USA . 1,246 parts In-Stock

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1,246

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Vyrian

USA . 530 parts In-Stock

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530

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 327 parts In-Stock

1+ parts

$3.271

100+ parts

-

1k+ parts

$2.944

10k+ parts

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327

$3.271

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$2.944

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MKK Technologies

India . 1,045 parts In-Stock

1+ parts

$6.150

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1,045

$6.150

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DigiPath Technology Company

USA . 1,045 parts In-Stock

1+ parts

$6.150

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1,045

$6.150

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Parana Technologies

USA . 1,395 parts In-Stock

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$3.910

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1,395

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$3.910

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Corphita

USA . 167 parts In-Stock

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Overview

Unlock the full potential of your designs with the M36L0R7040T0ZAQE from STMicroelectronics. This versatile memory solution combines FLASH and PSRAM technologies, ensuring rapid data access and efficiency for a wide range of applications, from IoT devices to automotive systems. With ST's renowned commitment to quality and innovation, you gain reliability and performance in every operation. Elevate your projects with a memory IC that seamlessly integrates into your advanced designs while optimizing power consumption.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact circuit designs and reduced PCB space, making installation easier for modern electronics.

Package Shape: RECTANGULAR

Rectangular packages fit well in most designs and can be efficiently used in high-density applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible integration into various systems without requiring synchronized timing, simplifying design.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM in a single IC provides versatility and supports a wide range of applications with varying memory needs.

Nominal Supply Voltage / Vsup: 1.8 V

A low nominal supply voltage minimizes power consumption, enhancing the energy efficiency of devices.

Power Supplies (V): 1.8

The consistent power supply specification supports stable performance across various applications.

No. of Terminals: 88

Having 88 terminals allows for extensive connectivity options, making this IC suitable for complex applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch grid array package type enhance the IC's performance in compact and high-density designs.

Maximum Operating Temperature: 85 °C

Operating reliably at higher temperatures makes this memory IC ideal for automotive and industrial applications.

Organization: 8MX16

The 8MX16 organization allows for efficient data handling and storage, suitable for complex processing tasks.

Minimum Operating Temperature: -25 °C

The ability to function at low temperatures expands usability in diverse environmental conditions.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish promotes better solderability and reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient heat dissipation and compact layout on PCBs.

Maximum Seated Height: 1.2 mm

A low seated height facilitates compact device designs, ideal for space-sensitive applications.

Width: 8 mm

A width of 8 mm makes the IC adaptable to many board designs without compromising space.

Minimum Supply Voltage (Vsup): 1.7 V

A low minimum supply voltage enables compatibility with a wide range of battery-operated devices.

Length: 10 mm

The compact length helps in fitting the IC in small form-factor applications.

Technology: CMOS

CMOS technology provides excellent power efficiency and high speed, making it ideal for modern applications.

Terminal Form: BALL

Ball terminal form allows for reliable connections and easier assembly in automated manufacturing processes.

Maximum Supply Current: 47 mA

A maximum supply current of 47 mA provides ample power for high-performance applications while remaining efficient.

No. of Words: 8388608 words

High word count capacity is beneficial for data-intensive applications requiring substantial memory.

Memory Width: 16

A memory width of 16 bits enables the IC to handle greater data throughput efficiently.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for tighter packing of terminals, maximizing PCB space usage.

No. of Words Code: 8M

With 8 million words, this memory IC offers ample storage for a variety of embedded applications.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95 V ensures the device operates efficiently under varying load conditions.

Memory Density: 134217728 bit

High memory density enables substantial data storage capacity, making it ideal for complex software applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this product is optimized specifically for memory-related applications.

Maximum Standby Current: 0.00007 Amp

Extremely low standby current helps prolong battery life in portable devices.

Technical Specifications

Other Function Memory ICs M36L0R7040T0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00007 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36L0R7040T0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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