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SN74S262N3

Texas Instruments

SN74S262N3 by Texas Instruments

SN74S262N3 by Texas Instruments is a TTL memory circuit IC with 20 terminals in an in-line package. Operating temperature range is 0-70°C, suitable for commercial applications. Its through-hole terminal form and rectangular shape make it ideal for various function memory circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,106 parts In-Stock

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7,106

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Digiode

USA . 3,645 parts In-Stock

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3,645

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Distributors (Availability)

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One Stop Electronics

USA . 578 parts In-Stock

1+ parts

$5.000

100+ parts

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578

$5.000

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Parana Technologies

USA . 1,393 parts In-Stock

1+ parts

$5.227

100+ parts

$485.403

1k+ parts

$4.704

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1,393

$5.227

$485.403

$4.704

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AZTECH Wire

Italy . 514 parts In-Stock

1+ parts

$5.349

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514

$5.349

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DigiPath Technology Company

USA . 1,751 parts In-Stock

1+ parts

$5.756

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1,751

$5.756

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ChromeModa Solutions

Germany . 1,725 parts In-Stock

1+ parts

$5.873

100+ parts

$4.816

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1,725

$5.873

$4.816

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IDEA Electronic Components Group

UK . 1,578 parts In-Stock

1+ parts

$5.873

100+ parts

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1k+ parts

$5.286

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1,578

$5.873

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$5.286

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Corphita

USA . 4,606 parts In-Stock

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4,606

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Overview

Enhance your electronic projects with the SN74S262N3 by Texas Instruments, a top-quality memory circuit that offers reliability and precision in a compact rectangular package. Manufactured by industry leader Texas Instruments, this TTL technology-based IC is designed for commercial-grade applications, ensuring optimal performance in a wide range of devices. With 20 terminals and a dual terminal position, this memory IC delivers seamless integration and efficiency. Upgrade your projects today with the SN74S262N3 and experience unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the memory IC, making it resistant to environmental factors and physical damage.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into different circuit layouts.

No. of Terminals: 20

Having 20 terminals allows for the memory IC to have multiple connection points, enabling it to interface with other components effectively.

Package Style (Meter): IN-LINE

In-line package style makes the memory IC easy to install and connect within the circuit, reducing installation complexity.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this memory IC can perform reliably even under demanding conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures that the memory IC can function in a wide range of temperature environments.

Terminal Position: DUAL

Dual terminal position provides redundancy and ensures a secure electrical connection, enhancing the reliability of the memory IC.

Temperature Grade: COMMERCIAL

Being rated for commercial temperature grade indicates that this memory IC is suitable for standard commercial applications.

Technology: TTL

Utilizing TTL technology allows the memory IC to achieve high-speed operation and efficient data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy soldering and secure connections, making installation and maintenance simpler.

Terminal Pitch: 2.54 mm

Having a terminal pitch of 2.54 mm ensures compatibility with standard PCB layouts and facilitates easy integration into circuit designs.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type, this IC is specifically designed for storing and retrieving data efficiently, making it suitable for various memory applications.

Technical Specifications

Other Function Memory ICs SN74S262N3 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T20

Memory IC Type:

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S262N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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