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MR10Q010CMB

Everspin Technologies

MR10Q010CMB by Everspin Technologies

MR10Q010CMB by Everspin Technologies is a 128Kx8 memory IC with CMOS technology. Operating at 3.3V, it offers synchronous operation and industrial temperature grade suitability. With a package style of grid array and low profile, it is ideal for applications requiring high-speed data storage in compact spaces.

Median Price

$10.319

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 213 parts In-Stock

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$6.030

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$1.380

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$6.030

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$1.380

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Mouser Electronics

USA . 470 parts In-Stock

1+ parts

$11.690

100+ parts

$10.020

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$9.440

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$11.690

$10.020

$9.440

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Verical

USA . 28 parts In-Stock

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$10.319

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28

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Nova Conductors

Japan . 81 parts In-Stock

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$7.421

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Vyrian

USA . 2,611 parts In-Stock

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Chip Stock

USA . 815 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4 parts In-Stock

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Continental Prestige Electronics

USA . 5,575 parts In-Stock

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$7.421

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$7.272

5,575

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$7.272

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$7.421

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$7.050

10k+ parts

$6.901

2,000

$7.421

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$7.050

$6.901

AZTECH Wire

Italy . 826 parts In-Stock

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$17.262

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826

$17.262

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Argo Parts USA

USA . 604 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the MR10Q010CMB by Everspin Technologies. This cutting-edge memory IC offers seamless integration and unmatched durability, making it a game-changer in diverse applications. From industrial settings to consumer electronics, this product delivers exceptional value and efficiency. Trust Everspin Technologies for top-of-the-line quality and innovation that exceeds expectations. Elevate your projects with the MR10Q010CMB and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Being surface mount allows for easy installation and space-saving on PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred efficiently and accurately.

Nominal Supply Voltage (Vsup): 3.3V

Operates at a standard voltage, making it compatible with many systems.

Maximum Operating Temperature: 85 °C

Can operate effectively in industrial environments with higher temperatures.

Memory Width: 8

Offers a wide memory interface for faster data processing.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Memory Density: 1048576 bit

High memory density allows for storing a large amount of data in a compact space.

Technical Specifications

Other Function Memory ICs MR10Q010CMB attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Maximum Seated Height:

1.35 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

MR10Q010CMB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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