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TMS2150-7JL

Texas Instruments

TMS2150-7JL by Texas Instruments

TMS2150-7JL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 70ns access time, 145mA max supply current, and 5V nominal voltage. It is ideal for applications requiring fast memory access in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,673 parts In-Stock

1+ parts

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6,673

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Digiode

USA . 3,224 parts In-Stock

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3,224

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,165 parts In-Stock

1+ parts

$3.121

100+ parts

-

1k+ parts

$3.641

10k+ parts

-

1,165

$3.121

-

$3.641

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DigiPath Technology Company

USA . 867 parts In-Stock

1+ parts

$3.437

100+ parts

$3.162

1k+ parts

-

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867

$3.437

$3.162

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IDEA Electronic Components Group

UK . 2,371 parts In-Stock

1+ parts

$3.507

100+ parts

-

1k+ parts

$3.156

10k+ parts

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2,371

$3.507

-

$3.156

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ChromeModa Solutions

Germany . 1,737 parts In-Stock

1+ parts

$3.507

100+ parts

$2.876

1k+ parts

-

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1,737

$3.507

$2.876

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One Stop Electronics

USA . 1,459 parts In-Stock

1+ parts

$7.000

100+ parts

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1,459

$7.000

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AZTECH Wire

Italy . 356 parts In-Stock

1+ parts

$13.252

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356

$13.252

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Corphita

USA . 4,657 parts In-Stock

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4,657

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Overview

Unlock the power of cutting-edge technology with the TMS2150-7JL by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliability and performance in every component. The TMS2150-7JL falls into the category of Other Function Memory ICs, offering a wide range of applications. This versatile memory circuit boasts a nominal supply voltage of 5V and a maximum operating temperature of 70°C. Experience seamless integration and enhanced functionality with this innovative product. Elevate your projects with the TMS2150-7JL today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity and stability, making this memory IC suitable for high temperature environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage level of 5V ensures compatibility with a wide range of systems and applications.

No. of Terminals: 24

Having 24 terminals allows for versatile connection options and integration into various circuit designs.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can function reliably in most operating conditions.

Organization: 512X9

The 512x9 organization provides a balance between storage capacity and data throughput, ideal for many memory-intensive applications.

Technology: MOS

Utilizing MOS technology ensures high speed and low power consumption, making this memory IC efficient and reliable.

Memory Width: 9

A memory width of 9 bits allows for efficient data storage and retrieval, suitable for a wide range of applications.

Maximum Access Time: 70 ns

With a maximum access time of 70 nanoseconds, this memory IC offers fast data retrieval and responsiveness.

Technical Specifications

Other Function Memory ICs TMS2150-7JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-7JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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