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M36W216TI85ZA1

STMicroelectronics

M36W216TI85ZA1 by STMicroelectronics

M36W216TI85ZA1 from STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density with Flash+SRAM technology. It operates at 3V, supports up to 70 °C, and has a max access time of 85ns. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,778 parts In-Stock

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3,778

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Digiode

USA . 2,533 parts In-Stock

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2,533

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Anansix

USA . 360 parts In-Stock

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360

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,083 parts In-Stock

1+ parts

$4.931

100+ parts

-

1k+ parts

$4.438

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2,083

$4.931

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$4.438

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MKK Technologies

India . 943 parts In-Stock

1+ parts

$9.273

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943

$9.273

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DigiPath Technology Company

USA . 943 parts In-Stock

1+ parts

$9.273

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943

$9.273

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Parana Technologies

USA . 484 parts In-Stock

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$5.896

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484

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$5.896

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Corphita

USA . 294 parts In-Stock

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294

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Overview

Unlock exceptional performance with the M36W216TI85ZA1 from STMicroelectronics, a leader in innovative memory solutions. This versatile flash and SRAM memory IC empowers your applications with rapid data access, energy efficiency, and reliability, ideal for a range of uses from automotive to consumer electronics. With its compact, low-profile design and robust temperature tolerance, it offers unbeatable value, ensuring your projects are future-ready and optimized for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a lightweight and durable housing that protects the internal components while ensuring cost-effectiveness.

Surface Mount: YES

Surface mount technology allows for smaller circuit designs, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape is standard for high-density applications, ensuring compatibility with a wide variety of circuit layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster response times, providing efficient memory access for time-sensitive applications.

Mixed Memory Type: FLASH + SRAM

This combination offers the advantages of both storage types, enabling fast read/write operations and non-volatile memory retention.

Nominal Supply Voltage / Vsup: 3 V

A nominal voltage of 3V ensures compatibility with many low-power applications, which can prolong battery life in portable devices.

Power Supplies (V): 3

Supports a single 3V power supply for simplicity in design and reduces the complexity of the power management system.

No. of Terminals: 66

The high number of terminals allows for increased data throughput and greater functionality in more complex applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array and fine pitch enable a dense and efficient layout, which is advantageous for high-performance computing environments.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in various environments, suitable for commercial applications.

Organization: 1MX16

The 1Mx16 organization provides flexibility in data handling and is suitable for a variety of application requirements.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this memory IC can operate in a wide range of environments, enhancing its versatility.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

This terminal finish offers excellent corrosion resistance and solderability, ensuring reliable connections and longevity of the device.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient PCB layout and routing, which can improve thermal performance and reduce signal interference.

Maximum Seated Height: 1.4 mm

The low profile design of 1.4mm is ideal for compact devices, allowing engineers to create thinner products without sacrificing performance.

Width: 8 mm

Its narrow width makes it suitable for densely populated PCBs, maximizing space for additional components.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V ensures compatibility with various power supply designs without the risk of performance degradation.

Length: 12 mm

The compact length makes it a practical choice for space-restricted applications, where real estate on the PCB is limited.

Temperature Grade: COMMERCIAL

Commercial temperature grade makes it suitable for a variety of everyday applications without the need for extreme environmental adaptations.

Technology: CMOS

CMOS technology ensures low power consumption and high speed, making this memory IC ideal for battery-operated devices.

Terminal Form: BALL

Ball terminal form provides enhanced reliability and easier soldering, improving the overall assembly process of the PCB.

Maximum Supply Current: 20 mA

With a maximum supply current of 20 mA, this IC is energy efficient, making it suitable for power-sensitive applications.

No. of Words: 1048576 words

This high word count indicates a significant data storage capability, suitable for applications requiring substantial memory.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and is compatible with many microcontroller architectures.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch allows for tighter packing of components, playing a crucial role in high-density electronic design.

No. of Words Code: 1M

1M words of code capacity makes this IC ideal for applications requiring extensive programmable memory, like embedded systems.

Maximum Supply Voltage (Vsup): 3.3 V

A maximum supply voltage of 3.3V allows for flexibility in usage, particularly in applications that require higher voltage tolerances.

Memory Density: 16777216 bit

With a memory density of 16M bits, this IC is suitable for memory-intensive applications such as multimedia processing.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it is optimized for storage solutions, ensuring high reliability and performance in memory tasks.

Maximum Standby Current: 0.00001 Amp

Exceptional standby current performance of 0.00001 Amp ensures energy efficiency when the device is not actively in use.

Maximum Access Time: 85 ns

A fast access time of 85 ns ensures high-speed data retrieval, making it suitable for performance-critical applications.

Technical Specifications

Other Function Memory ICs M36W216TI85ZA1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216TI85ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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