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47C04-E/ST

Microchip Technology

47C04-E/ST by Microchip Technology

47C04-E/ST by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. Ideal for automotive applications due to its small outline, thin profile package style and wide temperature range from -40°C to 125°C.

Median Price

$0.840

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$0.840

100+ parts

-

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54

$0.840

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Vyrian

USA . 4,090 parts In-Stock

1+ parts

-

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4,090

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VNN

France . 1,559 parts In-Stock

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1,559

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,034 parts In-Stock

1+ parts

$0.840

100+ parts

-

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4,034

$0.840

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Continental Prestige Electronics

USA . 1,856 parts In-Stock

1+ parts

$0.840

100+ parts

-

1k+ parts

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10k+ parts

$0.823

1,856

$0.840

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-

$0.823

Aztec Data Supply Inc.

USA . 2,076 parts In-Stock

1+ parts

$3.938

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2,076

$3.938

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Corohmni

South Africa . 166 parts In-Stock

1+ parts

$3.995

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166

$3.995

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Microchip USA

USA . 3,455 parts In-Stock

1+ parts

$5.070

100+ parts

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3,455

$5.070

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AZTECH Wire

Italy . 432 parts In-Stock

1+ parts

$7.396

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432

$7.396

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LOOK Integrated Logistics

Peru . 7,205 parts In-Stock

1+ parts

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7,205

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Montano Global Distributors

Canada . 4,631 parts In-Stock

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4,631

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LMD Electronica

Estonia . 3,958 parts In-Stock

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3,958

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NIA Electronics

USA . 2,073 parts In-Stock

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2,073

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.823

1k+ parts

$0.798

10k+ parts

$0.781

2,000

-

$0.823

$0.798

$0.781

Ledger Components

France . 676 parts In-Stock

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676

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Overview

Upgrade your electronics with the 47C04-E/ST by Microchip Technology, a top-tier manufacturer known for quality and reliability. This innovative Memory IC boasts a mixed memory type of EEPROM+SRAM, offering customers the best of both worlds. With a compact design, wide operating temperature range, and automotive-grade technology, this product is perfect for a variety of applications. Experience seamless performance and enhanced functionality with the 47C04-E/ST, providing unmatched value and benefits to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the memory IC, making it suitable for various environments.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise timing and coordination between data transfers, enhancing the overall performance of the memory IC.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures (-40 to 125°C) makes this memory IC suitable for automotive applications and other challenging environments.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and reliable performance, making the memory IC energy-efficient and cost-effective.

Maximum Access Time: 400 ns

The fast access time of 400 nanoseconds ensures quick data retrieval and processing, making this memory IC ideal for high-speed applications.

Technical Specifications

Other Function Memory ICs 47C04-E/ST attributes and parameters. Explore more Other Function Memory ICs devices from Microchip Technology

Specs

Maximum Access Time:

400 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

EEPROM+SRAM

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Trade Compliance

47C04-E/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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