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TMS2150-55DW

Texas Instruments

TMS2150-55DW by Texas Instruments

TMS2150-55DW by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and can handle temperatures from 0 to 70°C. Ideal for applications requiring fast memory access in commercial-grade electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,133 parts In-Stock

1+ parts

-

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6,133

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Digiode

USA . 2,448 parts In-Stock

1+ parts

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2,448

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 922 parts In-Stock

1+ parts

$3.511

100+ parts

-

1k+ parts

$4.036

10k+ parts

-

922

$3.511

-

$4.036

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DigiPath Technology Company

USA . 959 parts In-Stock

1+ parts

$3.866

100+ parts

$3.557

1k+ parts

-

10k+ parts

-

959

$3.866

$3.557

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ChromeModa Solutions

Germany . 2,482 parts In-Stock

1+ parts

$3.945

100+ parts

$3.235

1k+ parts

-

10k+ parts

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2,482

$3.945

$3.235

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IDEA Electronic Components Group

UK . 358 parts In-Stock

1+ parts

$3.945

100+ parts

-

1k+ parts

$3.550

10k+ parts

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358

$3.945

-

$3.550

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One Stop Electronics

USA . 827 parts In-Stock

1+ parts

$13.000

100+ parts

-

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10k+ parts

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827

$13.000

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AZTECH Wire

Italy . 325 parts In-Stock

1+ parts

$16.897

100+ parts

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325

$16.897

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Corphita

USA . 1,987 parts In-Stock

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1,987

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Overview

Unlock the full potential of your electronic devices with the TMS2150-55DW by Texas Instruments. Crafted with precision and expertise, this memory IC offers unparalleled quality and reliability. Perfect for a wide range of applications, this product provides exceptional value and benefits to customers looking for top-notch performance. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Choose the TMS2150-55DW and experience the difference in your projects today.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the Memory IC, ensuring reliability and longevity.

Surface Mount YES

Surface mount capability makes it easier to integrate this Memory IC into electronic devices, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V) 5

Operating at a nominal supply voltage of 5V makes this Memory IC compatible with a wide range of systems and applications.

No. of Terminals 24

Having 24 terminals provides sufficient connectivity options for interfacing the Memory IC with other components in a circuit.

Maximum Operating Temperature 70 °C

With a maximum operating temperature of 70°C, this Memory IC can function reliably in various environmental conditions.

Organization 512X9

The organization of 512 words with a width of 9 bits each allows for efficient storage and retrieval of data in the Memory IC.

Technology MOS

Utilizing MOS technology ensures high speed performance and low power consumption in this Memory IC.

No. of Words 512 words

With 512 words capacity, this Memory IC can store a significant amount of data for various applications.

Memory Width 9

Having a memory width of 9 bits allows for more granular and precise data processing in the Memory IC.

No. of Words Code 512

The 512 words code allows for efficient addressing and manipulation of the data stored in this Memory IC.

Maximum Access Time 55 ns

A fast maximum access time of 55 nanoseconds ensures quick data retrieval and processing in this Memory IC.

Technical Specifications

Other Function Memory ICs TMS2150-55DW attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDSO-G24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.135 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

135 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-55DW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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