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M36LLR8760T1ZAQE

STMicroelectronics

M36LLR8760T1ZAQE by STMicroelectronics

M36LLR8760T1ZAQE from STMicroelectronics features a mixed FLASH+PSRAM memory type with a density of 268M bits. It operates asynchronously at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for low-power applications, it comes in a compact grid array package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,883 parts In-Stock

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Vyrian

USA . 2,206 parts In-Stock

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Anansix

USA . 1,816 parts In-Stock

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1,816

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,539 parts In-Stock

1+ parts

$2.248

100+ parts

-

1k+ parts

$2.024

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1,539

$2.248

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$2.024

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MKK Technologies

India . 1,548 parts In-Stock

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$4.228

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$4.228

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DigiPath Technology Company

USA . 1,548 parts In-Stock

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$4.228

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1,548

$4.228

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Corphita

USA . 4,653 parts In-Stock

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4,653

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Parana Technologies

USA . 1,534 parts In-Stock

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$2.688

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Overview

Unlock exceptional performance with the M36LLR8760T1ZAQE from STMicroelectronics! This innovative memory IC combines advanced Flash and PSRAM technology, perfect for a diverse range of applications, from consumer electronics to automotive systems. STMicroelectronics is renowned for its quality and reliability, ensuring your projects benefit from cutting-edge solutions that enhance efficiency and save energy. Elevate your designs with this high-performance component, designed to meet the demands of tomorrow's technologies!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a more compact design and easier PCB assembly, leading to reduced manufacturing costs.

Package Shape: RECTANGULAR

A rectangular shape allows for efficient space utilization on the PCB, facilitating dense circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and improved performance in real-time applications.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides excellent data retention and performance, ideal for applications needing both speed and persistent memory.

Nominal Supply Voltage / Vsup: 1.8 V

A nominal supply voltage of 1.8 V enhances energy efficiency, making this IC suitable for low-power applications.

Power Supplies (V): 1.8

Operating on a single power supply of 1.8 V simplifies system design and reduces power consumption.

No. of Terminals: 88

A higher number of terminals allows for greater connectivity options and supports more complex circuit designs.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile grid array design aids in heat dissipation and allows for tight spaces in compact devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C indicates the IC's reliability in high-temperature environments, making it suitable for industrial applications.

Organization: 16MX16

The organization of 16M x 16 allows for efficient memory access patterns and data management.

Minimum Operating Temperature: -25 °C

This wide operating temperature range ensures functionality in diverse environments, enhancing its applicability.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish offers excellent solderability and reliability in connections, ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal positioning supports low-profile designs and improves thermal management.

Maximum Seated Height: 1.4 mm

A low seated height contributes to a compact design, which is crucial for space-constrained applications.

Width: 8 mm

A width of 8 mm makes it versatile for various PCB layouts while still enabling high-density arrangements.

Minimum Supply Voltage (Vsup): 1.7 V

This allows for flexibility in power supply options, accommodating various device requirements.

Length: 10 mm

A 10 mm length maintains a small form factor, essential for modern electronic devices.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance, ideal for consumer and industrial applications.

Terminal Form: BALL

Ball terminals provide enhanced mechanical stability and are compatible with automated assembly processes.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA indicates robust performance capability while managing power efficiency.

No. of Words: 16777216 words

Providing 16M words of memory ensures sufficient storage capacity for a wide range of applications.

Memory Width: 16

The 16-bit memory width is optimal for data handling in various applications, balancing performance and complexity.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch facilitates efficient layout designs while ensuring reliable connections.

No. of Words Code: 16M

Support for 16M words of code enhances the memory capacity, ideal for applications requiring significant data processing.

Maximum Supply Voltage (Vsup): 1.95 V

The flexibility of a maximum supply voltage of 1.95 V helps optimize power consumption based on specific application needs.

Memory Density: 268435456 bit

High memory density allows for efficient data storage, making this IC suitable for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it is specialized for data storage and retrieval, ensuring optimized performance.

Maximum Standby Current: 0.00011 Amp

The extremely low standby current signifies excellent power efficiency, crucial for battery-powered devices.

Technical Specifications

Other Function Memory ICs M36LLR8760T1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8760T1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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