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M36W216BI70ZA6T

STMicroelectronics

M36W216BI70ZA6T by STMicroelectronics

M36W216BI70ZA6T by STMicroelectronics is a low-profile, asynchronous mixed memory IC featuring 16Mbit density and operates b/w -40 °C to 85 °C. It supports a nominal voltage of 3V with a max access time of 70ns. Ideal for industrial applications requiring reliable flash and SRAM storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,591 parts In-Stock

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2,591

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Anansix

USA . 1,663 parts In-Stock

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1,663

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Digiode

USA . 670 parts In-Stock

1+ parts

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670

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 762 parts In-Stock

1+ parts

$4.513

100+ parts

-

1k+ parts

$4.061

10k+ parts

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762

$4.513

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$4.061

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MKK Technologies

India . 1,521 parts In-Stock

1+ parts

$8.486

100+ parts

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1,521

$8.486

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DigiPath Technology Company

USA . 1,521 parts In-Stock

1+ parts

$8.486

100+ parts

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1,521

$8.486

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Corphita

USA . 2,967 parts In-Stock

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2,967

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Parana Technologies

USA . 62 parts In-Stock

1+ parts

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100+ parts

$5.396

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62

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$5.396

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Overview

Elevate your designs with the M36W216BI70ZA6T from STMicroelectronics, a leader in innovative memory solutions. This high-performance memory IC combines Flash and SRAM technologies, offering unparalleled reliability for industrial applications. With its low-profile design and energy-efficient operation, it seamlessly integrates into various devices while ensuring optimal performance. Experience the advantage of quality engineering and boost your projects with exceptional speed and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliable performance in various environmental conditions.

Surface Mount: YES

Allows for efficient assembly and placement on circuit boards, saving space and reducing production costs.

Package Shape: RECTANGULAR

The rectangular design fits easily into standard layouts, making it versatile for various applications.

Operating Mode: ASYNCHRONOUS

Enables faster access times, improving overall system performance by allowing the processor to operate independently.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers the benefits of non-volatile storage with the speed of SRAM for efficient data handling.

Nominal Supply Voltage / Vsup: 3 V

Standard operating voltage that balances performance and power consumption, suitable for a wide range of devices.

Power Supplies (V): 3

A consistent power supply requirement enhances compatibility and simplifies circuit design.

No. of Terminals: 66

A higher number of terminals allows for more connections, enabling complex configurations and functionalities.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This style is designed for compact layouts, ideal for applications where space is at a premium.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications, ensuring reliability even in demanding temperature environments.

Organization: 1MX16

Efficient organization of memory allows easy addressing and data retrieval for optimal performance.

Minimum Operating Temperature: -40 °C

Withstands extreme cold, making it suitable for use in harsh environmental conditions.

Terminal Finish: Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

High-quality terminal finish enhances solderability and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom-positioned terminals are advantageous for surface-mount applications, facilitating easier placement.

Maximum Seated Height: 1.4 mm

Low profile design allows for integration into compact systems without increasing overall height.

Width: 8 mm

Compact width contributes to a smaller footprint, essential for space-constrained applications.

Minimum Supply Voltage (Vsup): 2.7 V

Allows operation in low-power environments, making it suitable for battery-operated devices.

Length: 12 mm

Compact length helps minimize PCB space use, enhancing overall design efficiency.

Temperature Grade: INDUSTRIAL

Engineered for industrial-grade applications, ensuring durability and performance under extreme conditions.

Technology: CMOS

CMOS technology provides low power consumption and high-speed performance, ideal for modern memory applications.

Terminal Form: BALL

Ball terminal form facilitates improved thermal and electrical performance, essential for reliable operation.

Maximum Supply Current: 20 mA

Low current draw helps in energy-efficient designs, extending battery life in portable applications.

No. of Words: 1048576 words

Provides substantial memory capacity for data storage, suitable for applications requiring extensive data handling.

Memory Width: 16

A memory width of 16 allows for efficient data processing and enhances throughput.

Terminal Pitch: 0.8 mm

Fine pitch design allows for greater component density on PCBs, making it ideal for compact applications.

No. of Words Code: 1M

This designation indicates a robust memory size, essential for complex applications.

Maximum Supply Voltage (Vsup): 3.3 V

Offering flexible voltage options benefits compatibility across various devices and systems.

Memory Density: 16777216 bit

High memory density supports complex applications that require significant data storage capabilities.

Memory IC Type: MEMORY CIRCUIT

Designed specifically for memory applications, ensuring optimal performance and component integration.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current contributes to energy efficiency and prolongs battery life in portable devices.

Maximum Access Time: 70 ns

Fast access time enhances system responsiveness, making it suitable for high-performance applications.

Technical Specifications

Other Function Memory ICs M36W216BI70ZA6T attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

STATIC RAM ORGANISED AS 128KBIT X 16

JESD-30 Code:

R-PBGA-B66

JESD-609 Code:

e1

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA66,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216BI70ZA6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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