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M36P0R9070E0ZACF

STMicroelectronics

M36P0R9070E0ZACF by STMicroelectronics

M36P0R9070E0ZACF by STMicroelectronics is a versatile memory IC featuring 32M words of mixed FLASH+PSRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for compact applications. Its thin profile and grid array design enhance space efficiency in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,130 parts In-Stock

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5,130

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Vyrian

USA . 3,789 parts In-Stock

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3,789

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Anansix

USA . 1,705 parts In-Stock

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1,705

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IDEA Electronic Components Group

UK . 514 parts In-Stock

1+ parts

$5.485

100+ parts

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$4.937

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514

$5.485

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$4.937

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MKK Technologies

India . 1,145 parts In-Stock

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$10.314

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$10.314

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DigiPath Technology Company

USA . 1,145 parts In-Stock

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$10.314

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1,145

$10.314

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A-Z Elektronik GmbH

Germany . 7,359 parts In-Stock

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7,359

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Alle Elektronik GmbH

Germany . 4,906 parts In-Stock

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4,906

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Corphita

USA . 4,763 parts In-Stock

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Parana Technologies

USA . 628 parts In-Stock

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$6.558

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Kepictronics

USA . 58 parts In-Stock

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Overview

Unlock unparalleled performance with the M36P0R9070E0ZACF memory IC from STMicroelectronics, a leader in innovative embedded solutions. This advanced Flash+PSRAM dual-memory device excels in efficiency and reliability, making it perfect for diverse applications, from consumer electronics to automotive systems. Enjoy reduced power consumption, robust design, and swift access times, ensuring your projects achieve their fullest potential without compromise. Elevate your designs with STMicroelectronics—where quality meets cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environments.

Surface Mount: YES

Surface mount capability allows for compact designs and easier integration into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, enhancing layout efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies design and control circuitry, making implementation easier in many applications.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides versatile memory solutions, enabling faster data processing and storage.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V is energy-efficient, contributing to lower power consumption in battery-operated devices.

Power Supplies (V): 1.8

Operating at 1.8V ensures compatibility with low-voltage systems, enhancing integration with modern electronics.

No. of Terminals: 107

A higher number of terminals increases the connectivity options, facilitating complex circuit designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Thin profile and fine pitch improve space efficiency and enable high-density packaging.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this memory IC is suitable for a wide range of commercial applications.

Organization: 32MX16

This organization provides 32 million words of 16 bits each, ideal for extensive data processing needs.

Minimum Operating Temperature: -30 °C

A minimum operating temperature of -30 °C supports operation in harsh environments, ensuring reliability.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient thermal and electrical performance in densely packed designs.

Maximum Seated Height: 1.2 mm

A low seated height of 1.2mm is advantageous for designs requiring slim profiles.

Width: 8 mm

At 8mm wide, this IC fits well into small form factor applications.

Minimum Supply Voltage (Vsup): 1.7 V

Supports operation down to 1.7V, providing flexibility in power supply choices.

Maximum Time At Peak Reflow Temperature (s): 40

The ability to withstand 40 seconds at peak reflow temperature ensures robust soldering processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows for compatibility with lead-free soldering processes.

Length: 11 mm

At 11mm in length, this memory IC is designed to fit various compact applications.

Temperature Grade: COMMERCIAL EXTENDED

Commercial extended temperature grade ensures reliable performance in a wider range of ambient conditions.

Technology: CMOS

Using CMOS technology offers lower power consumption and higher speed operation compared to other technologies.

Terminal Form: BALL

Ball terminal form facilitates easier soldering and better electrical performance.

No. of Words: 33554432 words

The IC can store 33,554,432 words, making it suitable for memory-intensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling and processing.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8mm is ideal for high-density circuit layouts while maintaining manufacturability.

No. of Words Code: 32M

Code of 32M in words indicates ample capacity for applications requiring significant memory.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95V enables stable operation while maintaining energy efficiency.

Memory Density: 536870912 bit

A high memory density of 536,870,912 bits supports storage of large datasets in compact silicon.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit, it caters to various applications requiring reliable memory components.

Maximum Access Time: 70 ns

A maximum access time of 70ns ensures fast data retrieval, ideal for high-speed applications.

Technical Specifications

Other Function Memory ICs M36P0R9070E0ZACF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANISED AS 8M X 16BIT

JESD-30 Code:

R-PBGA-B107

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

107

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA107,9X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8 mm

Trade Compliance

M36P0R9070E0ZACF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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