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M36P0R9070E0ZAQF

STMicroelectronics

M36P0R9070E0ZAQF by STMicroelectronics

M36P0R9070E0ZAQF by STMicroelectronics is a CMOS memory IC with a 32M x 16 organization, operating at 1.8V. It features a thin profile grid array package and supports asynchronous mode, making it ideal for compact electronic applications. With a temp range of -30 °C to 85 °C, it's suitable for commercial use.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,280 parts In-Stock

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2,280

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Anansix

USA . 1,769 parts In-Stock

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1,769

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Digiode

USA . 1,224 parts In-Stock

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1,224

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,391 parts In-Stock

1+ parts

$2.687

100+ parts

-

1k+ parts

$2.419

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1,391

$2.687

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$2.419

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MKK Technologies

India . 621 parts In-Stock

1+ parts

$5.053

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621

$5.053

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DigiPath Technology Company

USA . 621 parts In-Stock

1+ parts

$5.053

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621

$5.053

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Corphita

USA . 3,052 parts In-Stock

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3,052

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Parana Technologies

USA . 128 parts In-Stock

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$3.213

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128

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$3.213

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Overview

Unlock unparalleled performance with the M36P0R9070E0ZAQF from STMicroelectronics, a trusted leader in innovative memory solutions. This advanced memory IC is perfect for a variety of applications, delivering exceptional reliability and efficiency in demanding environments. With its compact design and low power consumption, it empowers your projects to thrive while ensuring optimal functionality and longevity. Choose STMicroelectronics for quality you can trust and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, the plastic/epoxy body material enhances the reliability and longevity of the memory IC.

Surface Mount: YES

The surface mount capability allows for compact circuit designs, facilitating easier integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, making it suitable for a variety of applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation supports faster performance by allowing independent read and write cycles without synchronization delays.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage of 1.8V minimizes power consumption, making this IC energy-efficient for battery-operated devices.

No. of Terminals: 107

The high number of terminals facilitates robust connectivity and ample functionality for various applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array package style allows for high-density designs and efficient thermal performance in compact spaces.

Maximum Operating Temperature: 85 °C

Capable of operating at higher temperatures ensures reliability in demanding environments, suitable for industrial applications.

Organization: 32MX16

The memory organization of 32MX16 provides a balanced approach to read and write operations, optimizing performance.

Minimum Operating Temperature: -30 °C

The ability to operate at low temperatures makes it versatile, ideal for outdoor or extreme condition applications.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout design, enhancing overall manufacturability.

Maximum Seated Height: 1.2 mm

A low seated height supports better airflow and thermal management, contributing to improved device performance.

Width: 8 mm

The compact width allows for easier placement on PCBs, facilitating more complex and space-saving designs.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage requirement is low, ensuring compatibility with a wide range of power sources.

Length: 11 mm

A modest length makes it suitable for integration into various design layouts, enhancing design flexibility.

Temperature Grade: COMMERCIAL EXTENDED

Designed for extended commercial temperature ranges, this IC is suitable for a wide variety of applications across multiple industries.

Technology: CMOS

Leveraging advanced CMOS technology, this memory IC offers high performance and low power consumption.

Terminal Form: BALL

Ball terminals provide excellent electrical performance and support for automatic soldering processes, ensuring manufacturing efficiency.

No. of Words: 33554432 words

This substantial word count affords ample storage capacity to support complex applications requiring significant data management.

Memory Width: 16

A memory width of 16 bits enhances data throughput, enabling faster processing and better overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch allows for higher-density packaging, ensuring more functions in a smaller form factor.

No. of Words Code: 32M

The coded memory capacity of 32M makes it a practical choice for applications needing substantial memory without taking up excessive space.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95V ensures a stable operation under various conditions, enhancing reliability.

Memory Density: 536870912 bit

A high memory density maximizes data storage capabilities, making it ideal for applications requiring large amounts of data processing.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it provides optimized performance for data storage tasks, essential for modern electronic systems.

Technical Specifications

Other Function Memory ICs M36P0R9070E0ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

JESD-30 Code:

R-PBGA-B107

Length:

11 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

107

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36P0R9070E0ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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