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M36P0R8070E0ZACF

STMicroelectronics

M36P0R8070E0ZACF by STMicroelectronics

M36P0R8070E0ZACF from STMicroelectronics is a synchronous memory IC featuring a mixed FLASH+PSRAM configuration with 16M words and a density of 268M bits. It operates at a nominal voltage of 1.8V, suitable for compact applications. Its thin profile and high temp range (-30 °C to 85°C) make it ideal for advanced electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,212 parts In-Stock

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Digiode

USA . 2,622 parts In-Stock

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Anansix

USA . 1,267 parts In-Stock

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IDEA Electronic Components Group

UK . 800 parts In-Stock

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$5.353

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$4.818

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$5.353

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$4.818

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MKK Technologies

India . 1,989 parts In-Stock

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$10.067

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DigiPath Technology Company

USA . 1,989 parts In-Stock

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$10.067

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1,989

$10.067

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A-Z Elektronik GmbH

Germany . 4,712 parts In-Stock

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4,712

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 3,708 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,141 parts In-Stock

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Parana Technologies

USA . 2,231 parts In-Stock

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$6.401

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Overview

Elevate your designs with the M36P0R8070E0ZACF from STMicroelectronics, a premium memory solution that seamlessly combines efficiency and reliability. With its unique FLASH+PSRAM architecture, this versatile component supports a wide range of applications while delivering exceptional performance in compact spaces. Backed by ST's industry-leading expertise, it ensures durability and stability across varied temperatures, empowering your innovations for tomorrow’s tech landscape. Discover the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it reliable for various applications.

Surface Mount: YES

Surface mount technology allows for a more compact design and easier integration into modern electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB layouts, allowing for efficient use of board real estate.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer rates and performance, which is crucial for high-speed applications.

Mixed Memory Type: FLASH+PSRAM

Combining Flash and PSRAM offers versatility, supporting both data storage and quick access memory requirements.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low nominal voltage improves energy efficiency, making it suitable for battery-powered devices.

Power Supplies (V): 1.8 V

Consistent with the nominal supply requirement, this voltage level ensures optimal performance while minimizing power consumption.

No. of Terminals: 107

A higher number of terminals allows for greater connectivity options and flexibility in circuit design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design facilitate high-density mounting, reducing overall system size.

Maximum Operating Temperature: 85 °C

Withstanding high temperatures, this product is suitable for use in rugged environments and industrial applications.

Organization: 16MX16

The organization of memory facilitates efficient data handling and improved bandwidth in applications.

Minimum Operating Temperature: -30 °C

Operating in low-temperature environments makes this memory IC reliable for outdoor and harsh conditions.

Terminal Position: BOTTOM

Bottom terminal positioning is optimal for better heat dissipation and ease of soldering in surface-mount applications.

Maximum Seated Height: 1.2 mm

A low seated height allows for compatibility with low-profile designs, enhancing overall system design flexibility.

Width: 8 mm

The compact width is advantageous for space-constrained applications, allowing for a more compact PCB layout.

Minimum Supply Voltage (Vsup): 1.7 V

This low minimum supply voltage offers design flexibility for various power supply configurations.

Length: 11 mm

The short length supports compact electronic designs, making it suitable for portable devices.

Technology: CMOS

CMOS technology provides low power consumption and high density, making it ideal for modern memory solutions.

Terminal Form: BALL

Ball terminal form enhances soldering reliability and supports efficient heat dissipation.

No. of Words: 16777216 words

This high word count indicates substantial data storage capacity, suitable for demanding applications.

Memory Width: 16

The 16-bit memory width allows for efficient data processing and transfer, enhancing overall system performance.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch is ideal for high-density applications, supporting space-efficient designs.

No. of Words Code: 16M

With 16M words, this memory IC offers ample storage capability for complex applications.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage accommodates a range of operating conditions while ensuring stable performance.

Memory Density: 268435456 bit

High memory density allows for significant data storage and effective handling of larger datasets in applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC fulfills a specific role in data storage and processing efficiently.

Maximum Access Time: 70 ns

A maximum access time of 70 ns ensures quick data retrieval, which is critical for performance-sensitive applications.

Technical Specifications

Other Function Memory ICs M36P0R8070E0ZACF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANISED AS 8M X 16

JESD-30 Code:

R-PBGA-B107

Length:

11 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

107

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA107,9X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36P0R8070E0ZACF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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