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M36LLR8860T1ZAQE

STMicroelectronics

M36LLR8860T1ZAQE by STMicroelectronics

M36LLR8860T1ZAQE by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,427 parts In-Stock

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Anansix

USA . 2,056 parts In-Stock

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2,056

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Vyrian

USA . 1,728 parts In-Stock

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1,728

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 7 parts In-Stock

1+ parts

$4.953

100+ parts

-

1k+ parts

$4.458

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7

$4.953

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$4.458

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MKK Technologies

India . 1,275 parts In-Stock

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$9.314

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1,275

$9.314

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DigiPath Technology Company

USA . 1,275 parts In-Stock

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$9.314

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1,275

$9.314

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Corphita

USA . 2,779 parts In-Stock

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2,779

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Parana Technologies

USA . 952 parts In-Stock

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$5.922

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952

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$5.922

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Overview

Unlock superior performance and efficiency with the M36LLR8860T1ZAQE from STMicroelectronics, a leader in innovative memory solutions. Designed for diverse applications, this advanced FLASH+PSRAM memory ensures seamless data handling while minimizing power consumption. Its robust design and low-profile footprint make it ideal for space-constrained environments. Trust in STMicroelectronics’ commitment to quality and reliability—empower your projects with unrivaled speed and endurance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface-mount technology allows for compact designs and high-density circuit layouts, improving overall performance and reducing board space.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient use of PCB space and facilitates easier integration into various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation leads to faster data transfer rates, enhancing performance in data-intensive applications.

Mixed Memory Type: FLASH+PSRAM

The combination of FLASH and PSRAM provides flexibility for different types of data storage, catering to a variety of application needs.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V ensures low power consumption and compatibility with modern electronic systems.

Power Supplies (V): 1.8

Utilizing a single power supply voltage of 1.8V simplifies circuit design and reduces overall system complexity.

No. of Terminals: 88

A high terminal count allows for more functionalities and connections, providing versatility in applications.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Low-profile and fine pitch design promotes efficient use of space while maintaining high pin density, essential for modern, compact designs.

Maximum Operating Temperature: 85 °C

The ability to operate at temperatures up to 85 °C makes this IC resilient in demanding environments, enhancing reliability.

Organization: 16MX16

The memory organization allows for efficient access and management of data, supporting a wide range of applications.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, this product is suitable for use in extreme conditions, ensuring versatility.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper finish provides excellent solderability and reliable electrical performance, enhancing durability.

Terminal Position: BOTTOM

Bottom terminal position allows for effective heat dissipation and improves assembly process on PCBs.

Maximum Seated Height: 1.4 mm

A low seated height enables the use of the IC in slim devices, supporting innovative form factors.

Width: 8 mm

The compact width facilitates integration into space-constrained applications, making it a versatile choice.

Minimum Supply Voltage (Vsup): 1.7 V

The capability to operate at a minimum supply voltage of 1.7V ensures compatibility with low-voltage systems.

Length: 10 mm

A compact length helps designers optimize PCB layout and space, essential for modern electronic designs.

Technology: CMOS

CMOS technology allows for low power consumption and high-speed operation, crucial for efficient memory IC performance.

Terminal Form: BALL

Ball terminal form ensures reliable connections and solder joint integrity, enhancing the robust design of the IC.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA balances performance and energy efficiency, suitable for power-sensitive applications.

No. of Words: 16777216 words

The large memory capacity of 16,777,216 words supports extensive data storage, making it ideal for memory-intensive applications.

Memory Width: 16

A memory width of 16 bits facilitates efficient data processing and storage, optimizing performance in various systems.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch allows for high-density packaging, helping designers achieve smaller and more efficient PCBs.

No. of Words Code: 16M

The 16M word code capability indicates substantial storage potential, catering to a wide range of applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V allows flexibility in design while maintaining low power consumption.

Memory Density: 268435456 bit

High memory density of 268,435,456 bits offers ample storage space, making it an excellent choice for data-heavy applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for storage performance, ensuring efficient data handling.

Maximum Standby Current: 0.00011 Amp

A low maximum standby current of 0.00011 Amp contributes to energy efficiency, ideal for battery-powered devices.

Technical Specifications

Other Function Memory ICs M36LLR8860T1ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860T1ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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