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MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.

Median Price

$4.986

Lifecycle Status

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3

In-Stock Inventory

1k+

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Verical

USA . 559 parts In-Stock

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-

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$4.986

1k+ parts

$4.703

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559

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$4.986

$4.703

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Nova Conductors

Japan . 10 parts In-Stock

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$6.397

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$6.397

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Vyrian

USA . 5,671 parts In-Stock

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5,671

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Distributors (Availability)

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Continental Prestige Electronics

USA . 4,056 parts In-Stock

1+ parts

$6.397

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$6.269

4,056

$6.397

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$6.269

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$6.397

100+ parts

$6.077

1k+ parts

$5.773

10k+ parts

$5.693

40

$6.397

$6.077

$5.773

$5.693

AZTECH Wire

Italy . 282 parts In-Stock

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$6.914

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282

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Authorized Procurement Solutions

USA . 24,000 parts In-Stock

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Argo Parts USA

USA . 4,053 parts In-Stock

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Overview

Everspin Technologies presents the MR256A08BMA35, a cutting-edge Memory Circuit IC that offers unmatched quality and reliability. Designed for various applications, this product boasts a low profile, fine pitch package style that ensures easy installation. With a maximum access time of 35 ns and a memory density of 262144 bits, customers can expect lightning-fast performance and ample storage capabilities. Trust Everspin Technologies to deliver superior technology that exceeds expectations. Upgrade your systems with the MR256A08BMA35 for seamless operation and enhanced efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the memory IC, ensuring its longevity.

Surface Mount: YES

Ease of installation and space-saving design for efficient PCB layout.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent operations, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage supply for reliable and stable operation of the memory IC.

No. of Terminals: 48

Sufficient number of terminals for connectivity and data transfer within the system.

Memory Density: 262144 bit

High memory density allows for storing a large amount of data in a compact IC package.

Maximum Access Time: 35 ns

Fast access time ensures quick retrieval of data, improving overall system responsiveness.

Technical Specifications

Other Function Memory ICs MR256A08BMA35 attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

S-PBGA-B48

Length:

8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

MR256A08BMA35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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