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MR25H256MDC

Everspin Technologies

MR25H256MDC by Everspin Technologies

MR25H256MDC by Everspin Technologies is a 262144-bit MEMORY CIRCUIT with 32KX8 organization, operating at 3.3V. This SMALL OUTLINE IC has a temperature range of -40 to 125 °C and is AEC-Q100 compliant, suitable for AUTOMOTIVE applications requiring reliable synchronous memory solutions.

Median Price

$13.721

Lifecycle Status

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3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 89 parts In-Stock

1+ parts

$13.721

100+ parts

$10.453

1k+ parts

$9.741

10k+ parts

$9.469

89

$13.721

$10.453

$9.741

$9.469

Distributors (In-Stock)

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Nova Conductors

Japan . 52 parts In-Stock

1+ parts

$10.923

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52

$10.923

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Vyrian

USA . 8,474 parts In-Stock

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8,474

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,754 parts In-Stock

1+ parts

$3.103

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$3.103

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AZTECH Wire

Italy . 779 parts In-Stock

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$10.139

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779

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Continental Prestige Electronics

USA . 4,684 parts In-Stock

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$10.923

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$10.704

4,684

$10.923

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$10.704

Netroflash

USA . 50 parts In-Stock

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$10.923

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50

$10.923

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Argo Parts USA

USA . 3,981 parts In-Stock

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Overview

Unlock the power of cutting-edge memory technology with Everspin Technologies' MR25H256MDC. As a leader in the industry, Everspin delivers top-notch quality and reliability in their products. The MR25H256MDC offers seamless integration for a wide range of applications, providing customers with unparalleled value and efficiency. Experience the advantages of this innovative memory circuit today and elevate your projects to new heights with Everspin Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the memory IC, making it suitable for various environments.

Surface Mount: YES

Easily mountable on PCBs, simplifying the manufacturing process.

Screening Level: AEC-Q100

Designed to meet automotive industry standards, ensuring high reliability and performance in automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, compatible with many systems and devices.

Minimum Operating Temperature: -40 °C

Can function in extreme cold conditions, ideal for a wide range of operating environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance.

Maximum Standby Current: 0.00001 Amp

Low standby current consumption helps conserve power and extend battery life in portable devices.

Technical Specifications

Other Function Memory ICs MR25H256MDC attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.05 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Trade Compliance

MR25H256MDC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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