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SN74ACT2151-25N

Texas Instruments

SN74ACT2151-25N by Texas Instruments

SN74ACT2151-25N by Texas Instruments is a 1KX12 MEMORY CIRCUIT IC with 25 ns access time, suitable for COMMERCIAL applications. It operates at 5V, has 28 terminals in IN-LINE package style, and offers a memory density of 12288 bits. Ideal for various electronic devices requiring fast memory access within the temperature range of 0 to 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,296 parts In-Stock

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8,296

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Digiode

USA . 4,518 parts In-Stock

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4,518

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4 parts In-Stock

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One Stop Electronics

USA . 1,004 parts In-Stock

1+ parts

$1.000

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1,004

$1.000

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Parana Technologies

USA . 2,118 parts In-Stock

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$4.846

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$5.365

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2,118

$4.846

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$5.365

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DigiPath Technology Company

USA . 1,754 parts In-Stock

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$5.336

100+ parts

$4.909

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1,754

$5.336

$4.909

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ChromeModa Solutions

Germany . 3,409 parts In-Stock

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$5.445

100+ parts

$4.465

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3,409

$5.445

$4.465

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IDEA Electronic Components Group

UK . 1,694 parts In-Stock

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$5.445

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$4.900

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AZTECH Wire

Italy . 683 parts In-Stock

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$8.027

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Corphita

USA . 2,012 parts In-Stock

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2,012

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Overview

Unlock the power of advanced memory circuits with the SN74ACT2151-25N by Texas Instruments. Known for their superior quality and cutting-edge technology, Texas Instruments delivers unrivaled performance in the category of Other Function Memory ICs. This product offers a wide range of applications and benefits, making it an essential component for any project requiring reliable memory storage. Upgrade your electronics with the SN74ACT2151-25N and experience seamless operation and optimal efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the memory IC, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage makes it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 70 °C

Can operate efficiently in moderate to high temperature environments without overheating.

Organization: 1KX12

Offers a high organization of 1KX12, providing a good balance between memory capacity and word width.

Technology: CMOS

CMOS technology ensures low power consumption and high speed performance, making it energy-efficient.

No. of Words: 1024 words

Large number of words available for storage, offering ample memory capacity for data and instructions.

Memory Width: 12

Each word has a width of 12 bits, providing flexibility in storing different data types and instructions.

Maximum Access Time: 25 ns

Fast access time of 25 ns ensures quick retrieval and processing of data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs SN74ACT2151-25N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDIP-T28

Memory Density:

12288 bit

Memory IC Type:

Memory Width:

12

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX12

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

SRAMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT2151-25N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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