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M36W108B120ZN6

STMicroelectronics

M36W108B120ZN6 by STMicroelectronics

M36W108B120ZN6 by STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at temperatures from -40 °C to 85°C, supporting supply voltages of 2.7V to 3.6V. Ideal for industrial applications, it offers a max access time of 120 ns and low standby current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,357 parts In-Stock

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3,357

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Digiode

USA . 1,194 parts In-Stock

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1,194

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Anansix

USA . 914 parts In-Stock

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914

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,051 parts In-Stock

1+ parts

$3.354

100+ parts

-

1k+ parts

$3.019

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1,051

$3.354

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$3.019

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MKK Technologies

India . 1,394 parts In-Stock

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$6.308

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$6.308

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DigiPath Technology Company

USA . 1,394 parts In-Stock

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$6.308

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$6.308

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Parana Technologies

USA . 1,398 parts In-Stock

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$4.011

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$4.011

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Corphita

USA . 1,074 parts In-Stock

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Overview

Unlock the power of innovation with the M36W108B120ZN6 from STMicroelectronics, a leader in memory solutions. This versatile Flash+SRAM memory IC excels in demanding applications requiring reliability and efficiency. Designed with a sleek, thin profile for seamless integration, it operates across a wide temperature range, making it ideal for industrial environments. Elevate your designs with ST's commitment to quality and performance, ensuring you get unmatched value and superior benefits for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable PLASTIC/EPOXY material ensures reliability and protection against environmental factors, making this memory IC suitable for various applications.

Surface Mount: YES

Surface mount technology enables efficient space utilization on PCBs, allowing for compact designs and easier integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized footprint, facilitating easier PCB layout and assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simple interface design and faster data access without the need for clock signals, speeding up performance in applications.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM allows for both non-volatile storage and fast access memory, making it ideal for applications that require both permanent and temporary data storage.

Power Supplies (V): 3/3.3

Compatible with standard operating voltages of 3V and 3.3V, this IC can be easily integrated into a wide range of systems without requiring extensive voltage regulation.

No. of Terminals: 48

With 48 terminals, this memory IC offers ample connectivity options for diverse applications, ensuring compatibility with various designs.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The very thin profile of the grid array package supports high-density mounting, ideal for modern, space-constrained electronic devices.

Maximum Operating Temperature: 85 °C

Operating at high temperatures up to 85 °C makes this IC suitable for industrial applications where heat tolerance is critical.

Organization: 1MX8

The 1MX8 organization optimizes data handling and storage, improving read/write efficiency in various applications.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme low temperatures down to -40 °C ensures reliability in harsh environments and outdoor applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides enhanced solderability and helps ensure robust connections in assembled circuits.

Terminal Position: BOTTOM

Bottom terminal positioning maximizes the board space for component layout and allows for better thermal management.

Maximum Seated Height: 1 mm

The low seated height of 1 mm helps in achieving ultra-slim designs, crucial for portable and compact electronic devices.

Width: 9.8 mm

A width of 9.8 mm assists in maintaining compact configurations while providing sufficient area for performance-enhancing features.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage allows for energy-efficient operation, which is especially beneficial for battery-powered devices.

Length: 11.8 mm

A manageable length of 11.8 mm contributes to the overall compactness of design, facilitating integration in space-critical applications.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, this IC ensures durability and reliability under challenging conditions.

Technology: CMOS

CMOS technology provides low power consumption and high performance, making it ideal for a wide range of electronic applications.

Terminal Form: BUTT

Butt terminal form enhances the solder joint reliability, ensuring firm connections in assembled products.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA supports significant power for efficient operation, relevant for demanding applications.

No. of Words: 1048576 words

With over 1 million words of storage capacity, this IC can handle extensive data, making it suitable for resource-intensive applications.

Memory Width: 8

An 8-bit memory width allows for efficient data processing and minimizes the amount of memory consumed per operation.

Terminal Pitch: 1 mm

A 1 mm terminal pitch makes this memory IC compatible with various PCB designs while ensuring reliable connection integrity.

No. of Words Code: 1M

The 1M words code signifies a substantial amount of memory space available, which is critical for data-intensive applications.

Maximum Supply Voltage (Vsup): 3.6 V

Supports a maximum supply voltage of 3.6 V, allowing flexibility in power supply design while ensuring optimal performance.

Memory Density: 8388608 bit

With a memory density of approximately 8 MB, this IC is capable of storing large amounts of data efficiently.

Memory IC Type: MEMORY CIRCUIT

This IC type is focused on memory functionality, ensuring optimized performance in data storage and retrieval applications.

Maximum Standby Current: 0.00002 Amp

A very low maximum standby current maximizes energy efficiency and prolongs battery life in portable devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns ensures fast data retrieval, improving the overall performance of applications that require quick response times.

Technical Specifications

Other Function Memory ICs M36W108B120ZN6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B120ZN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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