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M36W0R6040B0ZAQ

STMicroelectronics

M36W0R6040B0ZAQ by STMicroelectronics

M36W0R6040B0ZAQ by STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It combines FLASH and PSRAM in a compact 88-terminal grid array package. Ideal for applications requiring efficient asynchronous access with low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,838 parts In-Stock

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2,838

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Anansix

USA . 1,789 parts In-Stock

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1,789

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Digiode

USA . 1,065 parts In-Stock

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1,065

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 975 parts In-Stock

1+ parts

$3.945

100+ parts

-

1k+ parts

$3.550

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975

$3.945

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$3.550

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MKK Technologies

India . 2,304 parts In-Stock

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$7.418

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$7.418

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DigiPath Technology Company

USA . 2,304 parts In-Stock

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$7.418

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2,304

$7.418

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Parana Technologies

USA . 2,168 parts In-Stock

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$4.717

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2,168

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$4.717

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Corphita

USA . 1,121 parts In-Stock

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Overview

Unlock the potential of your designs with the M36W0R6040B0ZAQ from STMicroelectronics, a leader in innovative semiconductor solutions. This advanced mixed memory chip seamlessly combines FLASH and PSRAM technologies, ensuring exceptional performance for a variety of applications, from consumer electronics to IoT devices. With its compact, efficient design and reliability across temperature ranges, this memory IC delivers superior value, empowering you to create robust, cutting-edge projects that stand out in today’s competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and protection against environmental factors, making it suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for space-efficient designs and automated assembly processes, improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient PCB layout and optimizes space on the circuit board.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast access to memory without the need for a clock signal, contributing to quicker data retrieval times.

Mixed Memory Type: FLASH+PSRAM

Combining FLASH and PSRAM provides both persistent storage and fast access memory, catering to diverse application needs.

Nominal Supply Voltage / Vsup: 1.8 V

The low nominal supply voltage contributes to reduced power consumption, essential for energy-efficient designs.

Power Supplies (V): 1.8

Operating at low voltage keeps overall energy use minimal, which is crucial for battery-powered devices.

No. of Terminals: 88

A higher number of terminals facilitates greater connectivity and functionality within compact designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array style with a thin profile allows for compact placement on PCBs, saving space without sacrificing performance.

Maximum Operating Temperature: 85 °C

With a maximum temperature rating of 85 °C, this IC is suitable for applications in high-temperature environments, ensuring reliability.

Organization: 4MX16

The organization of 4MX16 allows for efficient data management and access patterns, making it ideal for specific data processing needs.

Minimum Operating Temperature: -30 °C

A minimum operating temperature of -30 °C enables operation in cold environments, broadening the potential application scope.

Terminal Finish: TIN LEAD

The tin-lead finish at the terminals provides reliable electrical connections and improves solderability during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning supports effective space utilization on PCBs, ideal for compact device designs.

Maximum Seated Height: 1.2 mm

A maximum seated height of just 1.2 mm helps minimize the profile of the components in tight designs.

Width: 8 mm

The compact width of 8 mm is beneficial for space-constrained applications, allowing for versatile design options.

Minimum Supply Voltage (Vsup): 1.7 V

With a minimum supply voltage of 1.7 V, this IC remains functional in low-voltage scenarios, extending its applicability.

Length: 10 mm

The length of 10 mm complements the compact design, making it suitable for smaller electronic devices.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Terminal Form: BALL

Ball terminal form facilitates improved thermal and electrical performance, enhancing reliability in various operating conditions.

Maximum Supply Current: 45 mA

With a maximum supply current of 45 mA, this IC can support moderate power requirements while maintaining efficiency.

No. of Words: 4194304 words

A substantial storage capacity of 4,194,304 words enables the handling of large datasets, suitable for complex applications.

Memory Width: 16

A memory width of 16 bits enhances data transfer rates and overall performance, optimizing data handling.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for fine-pitch designs, supporting high-density applications while maintaining performance.

No. of Words Code: 4M

The 4M word capacity indicates substantial storage potential, versatile for many memory-intensive tasks.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95 V ensures the IC operates efficiently within defined limits, protecting against over-voltage conditions.

Memory Density: 67108864 bit

With a memory density of 67108864 bits, this IC provides ample storage space for applications requiring significant memory.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit means this IC is specifically tailored for memory applications, ensuring optimized performance.

Maximum Standby Current: 0.00011 Amp

A very low maximum standby current translates to energy efficiency during idle periods, extending battery life in portable devices.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, quick data retrieval is facilitated, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W0R6040B0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

PSRAM IS ORGANIZED AS 1M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6040B0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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