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SN54AS8834GB

Texas Instruments

SN54AS8834GB by Texas Instruments

SN54AS8834GB by Texas Instruments is a 64x40 memory circuit IC with 2560-bit memory density. Operating at 5V, it features synchronous mode and MILITARY temperature grade. Its square GRID ARRAY package suits applications requiring high-performance memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,757 parts In-Stock

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6,757

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Digiode

USA . 3,282 parts In-Stock

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3,282

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Distributors (Availability)

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Parana Technologies

USA . 1,643 parts In-Stock

1+ parts

$4.726

100+ parts

-

1k+ parts

$5.220

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1,643

$4.726

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$5.220

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DigiPath Technology Company

USA . 1,233 parts In-Stock

1+ parts

$5.204

100+ parts

$4.787

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$5.204

$4.787

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IDEA Electronic Components Group

UK . 1,316 parts In-Stock

1+ parts

$5.310

100+ parts

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$4.779

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1,316

$5.310

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$4.779

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ChromeModa Solutions

Germany . 482 parts In-Stock

1+ parts

$5.310

100+ parts

$4.354

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482

$5.310

$4.354

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One Stop Electronics

USA . 821 parts In-Stock

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$7.000

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821

$7.000

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AZTECH Wire

Italy . 228 parts In-Stock

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$7.923

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228

$7.923

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Corphita

USA . 3,821 parts In-Stock

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Overview

Unlock the power of advanced memory technology with the SN54AS8834GB by Texas Instruments. Built with precision and expertise, this memory circuit IC offers unparalleled performance and reliability for a wide range of applications. From military-grade operations to industrial automation, this versatile device guarantees seamless functionality in any environment. Experience enhanced efficiency and seamless operation with the SN54AS8834GB, the perfect choice for your memory circuit needs. Upgrade your systems today with Texas Instruments' top-tier quality and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides excellent durability and protection for the memory IC, making it suitable for rugged industrial or military applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for synchronized data transfers, enhancing efficiency and speed in data processing.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures stable and reliable power delivery to the memory IC, preventing potential issues related to voltage fluctuations.

No. of Terminals: 156

Having 156 terminals provides ample connectivity options and allows for versatility in integration with other components in a system.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures that the memory IC can operate efficiently even in extreme temperature conditions.

Memory Density: 2560 bit

With a memory density of 2560 bits, this memory IC offers ample storage capacity for data processing and storage requirements.

Technical Specifications

Other Function Memory ICs SN54AS8834GB attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-CPGA-P156

Memory Density:

2560 bit

Memory IC Type:

Memory Width:

40

No. of Functions:

1

No. of Terminals:

156

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X40

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Equivalence Code:

PGA156M,15X15MOD

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2,5

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

PIN/PEG

Terminal Pitch:

2.54 mm

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN54AS8834GB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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