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SN54LS189J

Texas Instruments

SN54LS189J by Texas Instruments

SN54LS189J by Texas Instruments is a 16x4 MEMORY CIRCUIT IC with 64-bit memory density. It operates in ASYNCHRONOUS mode at temperatures ranging from -55 to 125°C. Featuring a 90 ns max access time, it is ideal for military-grade applications requiring fast parallel data processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,576 parts In-Stock

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6,576

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Digiode

USA . 4,536 parts In-Stock

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4,536

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Distributors (Availability)

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Parana Technologies

USA . 634 parts In-Stock

1+ parts

$4.319

100+ parts

$401.100

1k+ parts

$3.887

10k+ parts

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634

$4.319

$401.100

$3.887

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DigiPath Technology Company

USA . 136 parts In-Stock

1+ parts

$4.756

100+ parts

$4.375

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136

$4.756

$4.375

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ChromeModa Solutions

Germany . 6,074 parts In-Stock

1+ parts

$4.853

100+ parts

$3.979

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6,074

$4.853

$3.979

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IDEA Electronic Components Group

UK . 1,694 parts In-Stock

1+ parts

$4.853

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$4.368

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1,694

$4.853

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$4.368

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AZTECH Wire

Italy . 277 parts In-Stock

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$14.817

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277

$14.817

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One Stop Electronics

USA . 1,213 parts In-Stock

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$26.000

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1,213

$26.000

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Corphita

USA . 4,840 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the Texas Instruments SN54LS189J memory circuit. Designed for military-grade applications, this asynchronous memory IC offers a 16x4 organization and 3-state output characteristics. With a wide operating temperature range and 16-word capacity, this TTL technology-based product ensures optimal performance in demanding environments. Trust Texas Instruments for cutting-edge solutions that deliver unmatched value and benefits to customers.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and placement in various circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power to the memory IC for reliable performance.

No. of Terminals: 16

Having 16 terminals allows for a sufficient number of connections and interfaces for data transfer and control signals.

Package Style (Meter): IN-LINE

The in-line package style offers compact size and easy installation in tight spaces within electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this memory IC can withstand demanding environmental conditions.

Organization: 16X4

The 16X4 organization provides a balance between memory capacity and data width for efficient data storage and retrieval.

Output Characteristics: 3-STATE

The 3-STATE output characteristics offer flexibility in controlling the output signals, enabling efficient data transmission.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures the memory IC can function reliably in extreme cold environments.

Minimum Supply Voltage (Vsup): 4.5 V

Having a minimum supply voltage of 4.5V ensures the memory IC can operate within a wide range of power conditions.

Temperature Grade: MILITARY

The military-grade temperature rating indicates that this memory IC is designed to meet stringent performance and reliability standards.

Technology: TTL

Utilizing TTL technology offers fast and reliable digital signal processing capabilities for efficient memory operations.

Parallel or Serial: PARALLEL

Operating in parallel mode allows for simultaneous data transfer, resulting in faster and more efficient memory access.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure and reliable connections with the circuit board, enhancing overall durability.

No. of Words: 16 words

With 16 words of memory capacity, this IC can store a significant amount of data for various applications.

Memory Width: 4

A memory width of 4 bits allows for efficient data storage and retrieval operations, making this IC suitable for a wide range of applications.

Memory Density: 64 bit

With a memory density of 64 bits, this IC offers ample storage capacity for storing and accessing critical data.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type IC, this product is specifically designed for reliable data storage and retrieval functions, making it a dependable choice.

Maximum Access Time: 90 ns

With a maximum access time of 90 ns, this memory IC can quickly fetch and deliver data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs SN54LS189J attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-XDIP-T16

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Trade Compliance

SN54LS189J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-14-421-4862, 5962144214862

NIIN

144214862

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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