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SNC54AS871JD

Texas Instruments

SNC54AS871JD by Texas Instruments

SNC54AS871JD by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL IC with 28 terminals in an IN-LINE package. It operates b/w -55°C to 125°C, making it suitable for military applications requiring high temperature tolerance. The CERAMIC package body material ensures durability and reliability in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,183 parts In-Stock

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Digiode

USA . 875 parts In-Stock

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875

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Distributors (Availability)

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Parana Technologies

USA . 1,782 parts In-Stock

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$2.867

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$3.358

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1,782

$2.867

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$3.358

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DigiPath Technology Company

USA . 2,276 parts In-Stock

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$3.157

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$2.904

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IDEA Electronic Components Group

UK . 2,175 parts In-Stock

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$3.221

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$2.899

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$3.221

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$2.899

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ChromeModa Solutions

Germany . 341 parts In-Stock

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$3.221

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$2.641

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341

$3.221

$2.641

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AZTECH Wire

Italy . 654 parts In-Stock

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$6.841

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$6.841

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One Stop Electronics

USA . 1,376 parts In-Stock

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$25.000

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Corphita

USA . 1,777 parts In-Stock

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Overview

Upgrade your electronic devices with the SNC54AS871JD by Texas Instruments, a high-quality memory IC designed to enhance performance and reliability. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge technology with military-grade specifications, ensuring top-notch durability and efficiency. Ideal for various applications in the field of electronics, this product offers unmatched value and benefits to customers looking for superior functionality and long-lasting performance. Experience the advantage of using Texas Instruments products and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic is known for its high thermal conductivity, which helps in efficient heat dissipation, making this product suitable for high temperature environments.

Screening Level: MIL-STD-883 Class B (Modified)

This screening level ensures a high level of reliability and quality, making this product ideal for mission-critical applications where performance is crucial.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient use of space on a circuit board, making this product suitable for compact electronic devices.

No. of Terminals: 28

With a high number of terminals, this product offers versatility and compatibility with various circuit configurations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this product to function reliably in harsh environments with elevated temperatures.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that this product can withstand extreme cold conditions, making it suitable for a wide range of environments.

Terminal Position: DUAL

Dual terminal position provides redundancy and ensures reliable connections, enhancing the overall durability of this product.

Temperature Grade: MILITARY

Military-grade temperature grade indicates that this product meets stringent standards for reliability and performance, making it a dependable choice for demanding applications.

Technology: TTL

TTL technology offers high-speed performance and low power consumption, making this product suitable for applications where speed and efficiency are critical.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for strong, reliable connections on a circuit board, ensuring the longevity and stability of this product in various operating conditions.

Terminal Pitch: 2.54 mm

With a standard terminal pitch, this product can be easily integrated into existing circuit board designs, offering compatibility and ease of installation.

Technical Specifications

Other Function Memory ICs SNC54AS871JD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T28

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNC54AS871JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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