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TACT2151-25N

Texas Instruments

TACT2151-25N by Texas Instruments

TACT2151-25N by Texas Instruments is a 1KX11 memory circuit IC with 11264-bit memory density. It operates at temperatures b/w 0°C to 70°C, offering a max access time of 25ns. This CMOS technology IC comes in an IN-LINE package style and is ideal for applications requiring high-speed memory functions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,701 parts In-Stock

1+ parts

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6,701

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Digiode

USA . 146 parts In-Stock

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146

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 544 parts In-Stock

1+ parts

$4.688

100+ parts

-

1k+ parts

$5.172

10k+ parts

-

544

$4.688

-

$5.172

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ChromeModa Solutions

Germany . 2,802 parts In-Stock

1+ parts

$5.267

100+ parts

$4.319

1k+ parts

-

10k+ parts

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2,802

$5.267

$4.319

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IDEA Electronic Components Group

UK . 1,335 parts In-Stock

1+ parts

$5.267

100+ parts

-

1k+ parts

$4.740

10k+ parts

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1,335

$5.267

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$4.740

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AZTECH Wire

Italy . 221 parts In-Stock

1+ parts

$9.163

100+ parts

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221

$9.163

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One Stop Electronics

USA . 444 parts In-Stock

1+ parts

$13.000

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444

$13.000

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Corphita

USA . 4,048 parts In-Stock

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4,048

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DigiPath Technology Company

USA . 53 parts In-Stock

1+ parts

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100+ parts

$4.749

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53

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$4.749

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Overview

Unlock the power of cutting-edge technology with the TACT2151-25N by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch quality and reliability in all their products. The TACT2151-25N falls under the category of Other Function Memory ICs, making it versatile for a wide range of applications. With its high performance and efficiency, this memory circuit offers customers exceptional value and benefits. Trust Texas Instruments to deliver superior products that meet your needs and exceed your expectations. Elevate your projects with the TACT2151-25N today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the memory IC, making it suitable for a wide range of applications.

No. of Terminals: 28

Having 28 terminals allows for efficient connectivity and integration with other components in electronic circuits.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this memory IC can function reliably in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and performance of the memory IC.

Memory Width: 11

A memory width of 11 bits provides ample storage capacity for data processing and storage requirements.

Technical Specifications

Other Function Memory ICs TACT2151-25N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDIP-T28

Memory Density:

11264 bit

Memory IC Type:

Memory Width:

11

No. of Terminals:

28

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX11

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TACT2151-25N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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